Semiconductor device and fabrication method thereof

ABSTRACT

This invention provides a semiconductor device having high operation performance and high reliability. An LDD region  707  overlapping with a gate wiring is arranged in an n-channel TFT  802  forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions  717, 718, 719  and  720  not overlapping with a gate wiring are arranged in an n-channel TFT  804  forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region  707  than in the LDD regions  717, 718, 719  and  720.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor device having a circuitcomprising thin film transistors (hereinafter referred to as “TFTs”) ona substrate having an insulation surface, and to a fabrication method ofsuch a semiconductor device. More specifically, the present inventionrelates to electro-optical apparatuses (called also “electronicappliances”) typified by a liquid crystal display device including apixel unit (pixel matrix circuit) and driving circuits (driver circuits)disposed around the pixel unit and formed on the same substrate and anEL (Electro-Luminescence) display device, and electrical appliances(called also “electronic appliances”) having the electro-opticalapparatus mounted thereto.

The term “semiconductor devices” used in this specification representsgenerally those apparatuses which function by utilizing semiconductorcharacteristics, and includes also the electro-optical apparatuses andelectrical appliances using the electro-optical apparatus describedabove.

2. Description of the Related Art

Development of a semiconductor device having a large area integratedcircuit, that comprises TFTs formed on a substrate having an insulationsurface, has been made progressively. An active matrix type liquidcrystal display device, an EL display device and a close adhesion typeimage sensor are typical of such semiconductor devices. Particularlybecause TFTs using a polycrystalline silicon film (typically, a poly-Sifilm) as an active layer (the TFT will be hereinafter referred to as“poly-silicon TFT”) have high field mobility, they can form a variety offunctional circuits.

In the active matrix type liquid crystal display device, for example, anintegrated circuit that includes a pixel unit for displaying images foreach functional block, a shift register circuit, a level shiftercircuit, a buffer circuit, a sampling circuit, and so forth, each beingbased on a CMOS circuit, is formed on one substrate. In the case of theclose adhesion type image sensor, an integrated circuit such as asample-and-hold circuit, a shift register circuit, a multiplexercircuit, and so forth, is formed by using the TFTs.

These driving circuits (which are also called “peripheral drivingcircuits”) do not always have the same operating condition. Therefore,the characteristics required for the TFTs are naturally different tocertain extents. The pixel unit comprises a pixel TFT functioning as aswitching device and an auxiliary holding capacitance, and a voltage isapplied to a liquid crystal to drive it. Here, an alternating currentmust be applied to drive the liquid crystal, and a system called “frameinversion driving” has gained a wide application. Therefore, one of therequired characteristics of the TFT is that an OFF current value (adrain current value flowing through the TFT when it is in the OFFoperation) must be sufficiently lowered. Because a high driving voltageis applied to the buffer circuit, the TFT must have a high withstandvoltage such that it does not undergo breakdown even when a high voltageis applied. In order to improve the current driving capacity, it isnecessary to sufficiently secure the ON current value (the drain currentvalue flowing through the TFT when it is in the ON operation).

However, the poly-silicon TFT involves the problem that its OFF currentis likely to become high. Degradation such as the drop of the ON currentvalue is observed in the poly-silicon TFT in the same way as in MOStransistors used for ICs, or the like. It is believed that the maincause is hot carrier injection, and the hot carriers generated by a highfield in the proximity of the drain presumably invite this degradation.

An LDD (Lightly Doped Drain) structure is known as a structure of theTFT for lowering the OFF current value. This structure forms an impurityregion having a low concentration between a channel formation region anda source or drain region to which an impurity is doped in a highconcentration. The low concentration impurity region is called the “LDDregion”.

A so-called “GOLD (Gate-drain Overlapped LDD) structure” is also knownas a structure for preventing deterioration of the ON current value byhot carrier injection. Since the LDD region is so arranged as to overlapwith a gate wiring through a gate insulation film in this structure,this structure is effective for preventing hot carrier injection in theproximity of the drain and for improving reliability. For example,Mutsuko Hatano, Hajime Akimoto and Takeshi Sakai, “IEDM97 TechnicalDigest”, pp. 523-526, 1997, discloses a GOLD structure using side wallsformed from silicon. It has been confirmed that this structure providesby far higher reliability than the TFTs having other structures.

In an active matrix type liquid crystal display device, a TFT isdisposed for each of dozens to millions of pixels and a pixel electrodeis disposed for each TFT. An opposing electrode is provided on anopposing substrate side sandwiching a liquid crystal, and forms a kindof capacitors using the liquid crystal as a dielectric. The voltage tobe applied to each pixel is controlled by the switching function of theTFT. As the charge to this capacitor is controlled, the liquid crystalis driven, and an Image is displayed by controlling the quantity oftransmitting rays of light.

However, the accumulated capacity of this capacitor decreases graduallydue to a leakage current resulting from the OFF current, or the like.Consequently, the quantity of transmitting rays of light changes,thereby lowering the contrast of image display. Therefore, it has beencustomary to dispose a capacitance wiring, and to arrange anothercapacitor (called a “holding capacitance”) in parallel with thecapacitor using the liquid crystal as the dielectric in order tosupplement the capacitance lost by the capacitor using the liquidcrystal as the dielectric.

Nonetheless, the required characteristics of the pixel TFT of the pixelunit are not always the same as the required characteristics of the TFT(hereinafter called the “driving TFT”) of a logic circuit (called alsothe “driving circuit”) such as the shift register circuit and the buffercircuit. For example, a large reverse bias voltage (a negative voltagein n-channel TFT) is applied to the gate wiring in the pixel TFT, butthe TFT of the driving circuit is not fundamentally driven by theapplication of the reverse bias voltage. The operation speed of theformer may be lower than 1/100 of the latter.

The GOLD structure has a high effect for preventing the degradation ofthe ON current value, it is true, but is not free from the problem thatthe OFF current value becomes greater than the ordinary LDD structures.Therefore, the GOLD structure cannot be said as an entirely preferablestructure for the pixel TFT, in particular. On the contrary, theordinary LDD structures have a high effect for restricting the OFFcurrent value, but is not resistant to hot carrier injection, as is wellknown in the art.

For these reasons, it is not always preferred to constitute all the TFTsby the same construction in the semiconductor devices having a pluralityof integrated circuits such as the active matrix type liquid crystaldisplay device.

When a sufficient capacitance is secured by forming a holdingcapacitance using the capacitance wiring in the pixel unit asrepresented by the prior art example described above, an aperture ratio(a ratio of an area capable of image display to an area of one pixel)must be sacrificed. Particularly in the case of a small high precisionpanel used for a projector type display device, the area per pixel is sosmall that the drop of the aperture ratio by the capacitance wiringbecomes a serious problem.

SUMMARY OF THE INVENTION

In order to solve the problems described above, the present inventionaims at improving operation performance and reliability of asemiconductor device by optimizing the structures of the TFT used foreach circuit of the semiconductor device in accordance with the functionof each circuit.

It is another object of the present invention to provide a structure forlowering the area of a holding capacitance provided to each pixel andfor improving an aperture ratio in a semiconductor device having a pixelunit.

To accomplish the objects described above, the present invention employsthe following constructions. In a semiconductor device including a pixelunit and a driving circuit on the same substrate, the present inventionprovides a semiconductor device wherein an LDD region of an n-channelTFT forming the driving circuit described above is formed in such afashion that a part or the whole part thereof overlaps with a gatewiring of the n-channel TFT while sandwiching a gate insulation filmbetween them, and an LDD region of a pixel TFT that forms the pixel unitis formed in such a fashion as not to overlap with a gate wiring of thepixel TFT while sandwiching a gate insulation film.

In addition to the construction described above, the holding capacitanceof the pixel unit may comprise a shading film arranged on a resin film,an oxide of the shading film and a pixel electrode. According to thisarrangement, the holding capacitance can be formed with an extremelysmall area and consequently, the aperture ratio of the pixel can beimproved.

Another detailed construction according to the present invention is asfollows. In a semiconductor device including a pixel unit and a drivingcircuit on the same substrate, this driving circuit includes a firstn-channel TFT formed in such a fashion that the whole part of its LDDregion overlaps with a gate wiring while sandwiching a gate insulationfilm between them, and a second n-channel TFT formed in such a fashionthat a part of its LDD region overlaps with a gate wiring whilesandwiching a gate insulation film between them, and the pixel unitincludes a pixel TFT formed in such a fashion that an LDD region doesnot overlap with a gate wiring while sandwiching a gate insulation filmbetween them. Needless to say, a holding capacitance of the pixel unitmay comprise a shading film disposed on an organic resin film, an oxideof the shading film and a pixel electrode.

In the construction described above, the LDD region of the n-channel TFTforming the driving circuit may contain an element belonging to theGroup 15 of the Periodic Table in a concentration higher by 2 to 10times that of the LDD region of the pixel TFT. The LDD region of thefirst n-channel TFT may be formed between a channel formation region anda drain region, and the LDD regions of the second n-channel TFT may beso formed as to sandwich the channel formation region between them.

As to a method of fabricating a semiconductor device, the presentinvention employs the following construction. In a method of fabricatinga semiconductor device including a pixel unit and a driving circuit onthe same substrate, the method according to the present inventioncomprises the steps of forming a channel formation region, a sourceregion, a drain region and an LDD region between the drain region andthe channel formation region, in an active layer of a first n-channelTFT that forms the driving circuit; forming a channel formation region,a source region, a drain region, an LDD region between the source regionand the channel formation region and an LDD region between the drainregion and the channel formation region, in an active layer of a secondn-channel TFT that forms the driving circuit; forming a channelformation region, a source region and a drain region in an active layerof a p-channel TFT that forms the driving circuit; and forming a channelformation region, a source region, a drain region and an LDD regionbetween the drain region and the channel formation region, in an activelayer of a pixel TFT that forms the pixel unit; wherein the LDD regionof the first n-channel TFT is formed in such a fashion that the wholepart thereof overlaps with the gate wiring of the first n-channel TFTwhile sandwiching the gate insulation film between them, the LDD regionof the second n-channel TFT is formed in such a fashion that a partthereof overlaps with the gate wiring of the first n-channel TFT whilesandwiching the gate insulation film between them, and the LDD region ofthe pixel TFT is so arranged as not to overlap with the gate wiring ofthe pixel TFT while sandwiching the gate insulation film between them.

As to the fabrication method, the present invention employs thefollowing another construction. In a method of fabricating asemiconductor device including a pixel unit and a driving circuit on thesame substrate, the method of the present invention comprises a firststep of forming an active layer on a substrate; a second step of forminga gate insulation film in contact with the active layer; a third step ofadding an element belonging to the Group 15 of the Periodic Table to anactive layer of an n-channel TFT forming the driving circuit, andforming an n⁻ region; a fourth step of forming a conductive film on thegate insulation film; a fifth step of patterning the conductive film andforming a gate wiring of a p-channel TFT; a sixth step of adding anelement belonging to the Group 13 of the Periodic Table inself-alignment to the active layer of the p-channel TFT with the gatewiring of the p-channel TFT as a mask, and forming a p⁺⁺ region; aseventh step of patterning the conductive film that is not patterned inthe fifth step, and forming a gate wiring of the n-channel TFT; aneighth step of adding an element belonging to the Group 15 of thePeriodic Table to the active layer of the n-channel TFT, and forming ann⁺ region; and a ninth step of adding an element belonging to the Group15 of the Periodic Table in self-alignment with the gate wirings of then-channel TFT and the p-channel TFT as the masks, and forming an n⁻⁻region.

In a method of fabricating a semiconductor device including a pixel unitand a driving circuit on the same substrate, a further detailedconstruction of the method of the present invention comprises a firststep of a first step of forming an active layer on a substrate; a secondstep of forming a gate insulation film in contact with the active layer;a third step of adding an element belonging to the Group 15 of thePeriodic Table to an active layer of an n-channel TFT forming thedriving circuit, and forming an n⁻ region; a fourth step of forming aconductive film on the gate insulation film; a fifth step of patterningthe conductive film and forming a gate wiring of a p-channel TFT; asixth step of adding an element belonging to the Group 13 of thePeriodic Table in self-alignment to the active layer of the p-channelTFT with the gate wiring of the p-channel TFT as a mask, and forming ap⁺⁺ region; a seventh step of patterning the conductive film, that isnot patterned in the fifth step, and forming a gate wiring of then-channel TFT; an eighth step of adding an element belonging to theGroup 15 of the Periodic Table to the active layer of the n-channel TFT,and forming an n⁺ region; and a ninth step of adding an elementbelonging to the Group 15 of the Periodic Table in self-alignment withthe gate wirings of the n-channel TFT and the p-channel TFT as themasks, and forming an n⁻⁻ region.

In the construction described above, the sequence of the process stepsfor forming the p⁺⁺ region, the n⁺ region or the n⁻⁻ region may bechanged appropriately. Whichever sequence may be employed, the basicfunction of the TFT formed finally does not change and the effects ofthe present invention are not spoiled in any way.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 2A to 2C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 3A to 3C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIG. 4 is schematic sectional view showing a structure of a holdingcapacitance;

FIGS. 5A to 5C are schematic sectional views showing a fabricationprocess of a holding capacitance;

FIGS. 6A to 6D are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 7A to 7C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 8A to 8C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIG. 9 is a sectional structural view showing an active matrix typeliquid crystal display device;

FIG. 10 is a perspective view of an active matrix type liquid crystaldisplay device;

FIGS. 11A and 11B are top views of a pixel unit;

FIGS. 12A and 12B are sectional views showing a structure of a holdingcapacitance;

FIG. 13 is a block circuit diagram of an active matrix type liquidcrystal display device;

FIGS. 14A to 14E are sectional views showing a fabrication process of acrystalline semiconductor film;

FIGS. 15A to 15E are sectional views showing a fabrication process of acrystalline semiconductor film;

FIGS. 16A to 16C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 17A and 17B are a sectional view and a top view of a pixel unit;

FIGS. 18A to 18C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 19A to 19C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 20A to 20C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIGS. 21A to 21D are schematic sectional views showing a pixel unit anda driving circuit;

FIGS. 22A to 22C are schematic sectional views showing a fabricationprocess of a pixel unit and a driving circuit;

FIG. 23 is a schematic sectional view showing a structure of a pixelunit and a driving circuit;

FIG. 24 is a circuit diagram showing the construction of an activematrix type EL display device;

FIGS. 25A and 25B are a top view and a sectional view showing theconstruction of an EL display device;

FIG. 26 is a schematic sectional view showing a sectional structure ofan EL display device;

FIGS. 27A and 27B are a schematic view and a wiring diagram showing atop structure of a pixel unit of an EL display device;

FIG. 28 is a schematic sectional view showing a sectional structure ofan EL display device;

FIGS. 29A to 29C are circuit diagrams showing the circuit constructionof a pixel unit of an EL display device;

FIGS. 30A to 30F are perspective views showing an example of electricalappliances;

FIGS. 31A to 31D are perspective views showing an example of electricalappliances; and

FIGS. 32A and 32B are schematic views showing the construction of anoptical engine.

FIG. 33 is a graph showing ID-VG curves and μ_(FE) of an n-channel TFT.

FIG. 34 is a graph showing the relation between degradation rate of theμ_(FE) and the Lov region length of the n-channel TFT.

FIGS. 35A and 35B are graphs showing time dependent change of currentconsumption and the lowest operation voltage.

FIG. 36 is a graph showing ID-VG curves and μ_(FE) of an n-channel TFT.

FIG. 37 is a graph showing the relation between degradation rate of theμ_(FE) and the Lov region length of the n-channel TFT.

FIGS. 38A and 38B are graphs showing time dependent change of currentconsumption and the lowest operation voltage.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, preferred embodiments of the present invention will beexplained in detail with reference to Examples thereof.

Example 1

The first example will be explained with reference to FIGS. 1A to 1C, 2Ato 2C and 3A to 3C. A method of simultaneously fabricating TFT of apixel unit and TFT of a driving circuit disposed around the pixel unitwill be explained.

FIG. 1A shows the formation step of active layers and a gate insulationfilm.

In FIG. 1A, a substrate 101 is preferably made of a glass substrate, aquartz substrate or a plastic substrate (inclusive of a plastic film). Asilicon substrate or a metal substrate having an insulation film on thesurface thereof can be used, too.

An underlying film 102 that comprises a silicon-containing insulationfilm (the term “insulation film” generically represents a silicon oxidefilm, a silicon nitride film and a silicon nitride oxide film in thisspecification) is formed by a plasma CVD process or a sputtering processto a thickness of 100 to 400 nm on the surface of the substrate 101 onwhich the TFTs are to be fabricated. The term “silicon nitride oxidefilm” used in this specification represents an insulation film expressedby the general formula SiO_(x)N_(y) (where 0<x and y<1) and containingsilicon, oxygen and nitrogen in a predetermined proportion.

In this example, the underlying film 102 has a two-layered structureconsisting of a silicon nitride film 102 that has a thickness within therange of 25 to 100 nm and is hereby 50 nm and a silicon oxide film 103that has a thickness within the range of 50 to 300 nm and is hereby 150nm. The underlying film 102 is disposed so as to prevent contaminationof impurities from the substrate, and need not always be disposed whenthe quartz substrate is used.

Next, an amorphous silicon film having a thickness of 20 to 100 nm isformed on the underlying film 102 by a known film formation method. Theamorphous silicon film is preferably subjected to a dehydrogenationtreatment preferably at 400 to 550° C. for several hours, though thetreatment temperature and time vary depending on the hydrogen content. Acrystallization step is preferably carried out after the hydrogencontent is lowered to not greater than 5 atomic %. Though the amorphoussilicon film may be formed by other fabrication methods such assputtering and vacuum deposition, impurity elements contained in thefilm such as oxygen and nitrogen are preferably lowered sufficiently.Because the underlying film and the amorphous silicon film can be formedby the same film formation method, they may be formed herebycontinuously. When the underlying film is prevented from being exposedonce to the atmospheric air after its formation, surface contaminationcan be prevented, and variance of characteristics of the resulting TFTcan be reduced.

A process step of forming the crystalline silicon film from theamorphous silicon film may use a known laser crystallization technologyor thermal crystallization technology. The crystalline silicon film maybe formed by the thermal crystallization method using a catalyticelement that promotes crystallization of silicon. Besides the amorphoussilicon film, a micro-crystalline silicon film may be used or thecrystalline silicon film may be directly deposited. Furthermore, thecrystalline silicon film may be formed by using the known technology ofSOI (Silicon On Insulators) that bonds single crystal silicon onto thesubstrate.

Unnecessary portions of the crystalline silicon film thus formed, areetched away to fount island-like semiconductor films (hereinafter calledthe active layers n) 104, 105 and 106. Boron (B) may be doped in advancein a concentration of about 1×10¹⁵ to 1×10¹⁷ cm⁻³ into regions of thecrystalline silicon film where n-channel TFT is to be formed, in orderto control a threshold voltage.

Next, a gate insulation film 107 consisting essentially of silicon oxideor silicon nitride as the principal component is so formed as to coverthe active layers 104, 105 and 106. The gate insulation film 107 isformed to a thickness of 10 to 200 nm, preferably 50 to 150 nm. Forexample, a silicon nitride oxide film is formed by a plasma CVD processto a thickness of 75 nm from N₂O and SiH₄ as the starting materials.This film is then oxidized thermally at 800 to 1,000° C. in an oxygenatmosphere or in a mixed atmosphere of oxygen and hydrochloric acid,giving a 115 nm-thick gate insulation film.

FIG. 1B shows the formation of an n⁻ region.

Resist masks 108, 109, 110 and 111 are formed over the surface of theactive layers 104 and 106, the entire surface of the regions in whichwiring is to be formed, and over a part of the active layer 105(inclusive of the region which is to serve as the channel formationregion). An n-type imparting impurity element is added to form a lowconcentration impurity region 112. This low concentration impurityregion 112 is the impurity region for forming later an LDD region (whichis called the “Lov region” in this specification with “ov” representing“overlap”) that overlaps with the gate wiring through the gateinsulation film beneath the n-channel TFT of a CMOS circuit. Theconcentration of the impurity element for imparting the n-type that iscontained in the resulting low concentration impurity region, isexpressed by “n⁻”. Therefore, the low concentration impurity region 112can be paraphrased to the “n⁻ region” in this specification.

In this example, phosphorus is added by ion doping that excitesphosphine (PH₃) by plasma excitation without executing mass separation.An ion implantation method that executes mass separation may be usednaturally. In this process step, phosphorus is added to thesemiconductor layer beneath the gate insulation film 107 through thisfilm 107. The phosphorus concentration to be doped is preferably withinthe range of 2×10¹⁶ to 5×10¹⁹ atoms/cm³, and is hereby 1×10¹⁸ atoms/cm³.

After the resist masks 108, 109, 110 and 111 are removed, heat-treatmentis carried out at 400 to 900° C., preferably 550 to 800° C., for 1 to 12hours in a nitrogen atmosphere so as to activate phosphorus that isdoped. This activation may be effected by irradiating a laser beam.Though this process step can be omitted, a higher activation ratio canbe expected if this step is conducted.

FIG. 1C shows the formation of conductive films for gate wirings.

A first conductive film 113 is formed to a thickness of 10 to 100 nm byusing an element selected from the group consisting of tantalum (Ta),titanium (Ti), molybdenum (Mo) and tungsten (W), or conductive materialsof any of these elements as the principal component. Tantalum nitride(TaN) or tungsten nitride (WN), for example, is preferably used for thefirst conductive film 113.

A second conductive film 114 is formed to a thickness of 100 to 400 nmon the first conductive film 113 by using an element selected from thegroup consisting of Ta, Ti, Mo and W, or a conductive material of any ofthese elements as the principal component. For example, Ta may be formedto a thickness of 200 nm. It is hereby effective to form a silicon filmto a thickness of about 2 to 20 nm beneath the first conductive film 113or on the second conductive film 114 in order to prevent oxidation ofthe conductive films 113 and 114 (particularly, the conductive film114).

FIG. 2A shows the formation of a p-channel gate wiring and the formationof p⁺⁺ regions.

After resist masks 115, 116, 117 and 118 are formed, the firstconductive film and the second conductive film (which will be handledhereinafter as a laminate film) are etched, giving a gate wiring 119(also called the “gate electrode”) of the p-channel TFT and gate wirings120 and 121. Incidentally, the conductive films 122 and 123 are leftnon-etched in such a manner as to cover the entire surface of the regionthat is to serve as the n-channel TFT.

The resist masks 115, 116, 117 and 118 are left as the masks, and aprocess step of doping an impurity element for imparting the p-type iscarried out for apart of the semiconductor layer 104 at which thep-channel TFT is formed. Boron is used hereby as the impurity elementand is doped by an ion doping method using diborane (B₂H₆). (Needless tosay, an ion implantation method may be employed, too.) In this instance,boron is doped in a concentration of 5×10²⁰ to 3×10²¹ atoms/cm³.Incidentally, the concentration of the p-type imparting impurity elementcontained in the resulting impurity region is hereby expressed as “p⁺⁺”.Therefore, the impurity regions 124 and 125 can be paraphrased to the“p⁺⁺ regions” in this specification.

Incidentally, in this process step, a process step may be carried outwhich etches away the gate insulation film 107 using the resist masks115, 116, 117 and 118 to expose a part of the active layer 104 and thenadds the p-type imparting impurity element. In this case, since theacceleration voltage may be low, damage to the active layer is small,and throughput can be improved.

FIG. 2B shows the formation of n-channel gate wirings.

After the resist masks 115, 116, 117 and 118 are removed, resist masks126, 127, 128 and 129 are formed, and gate wirings 130 and 131 of then-channel TFT are formed. At this time, the gate wiring 130 is formed insuch a manner as to overlap with the n⁻ region 112 through the gateinsulation film 107.

FIG. 2C shows the formation of n⁺ regions.

The resist masks 126, 127, 128 and 129 are removed, and resist masks132, 133 and 134 are formed afresh. A process step of forming animpurity region, that is to function as a source or drain region in eachn-channel TFT, is carried out. The resist mask 134 is formed in such amanner as to cover the gate wiring 131 of the n-channel TFT to form theLDD region in such a manner that the gate wiring does not overlap withthe n-channel TFT of the pixel unit in a subsequent process step.

An n-type imparting impurity element is added to form impurity regions135, 136, 137, 138 and 139. Here, the ion doping method that usesphosphine (PH₃) is employed. (Needless to say, the ion implantationmethod may be employed, as well.) The phosphorus concentration in thisregion is 1×10²⁰ to 1×10²¹ atoms/cm³. The concentration of the n-typeimparting impurity element contained in the impurity regions 137, 138and 139 is hereby expressed as “n⁺”. Therefore, the impurity regions137, 138 and 139 in this specification can be paraphrased to the “n⁺regions”. Strictly speaking, since the n⁻ region has been formedalready, the impurity region 135 contains phosphorus in a somewhathigher concentration than the impurity regions 136, 137, 138 and 139.

In this process step, a step of adding the n-type imparting impurityelement may be conducted after the gate insulation film 107 is etchedusing the resist masks 132, 133 and 134 and the gate wiring 130 as themasks to expose a part of the active layers 105 and 106. In this case,since the acceleration voltage may be low, damage to the active layer issmall and throughput can be improved.

FIG. 3A shows the formation of n⁻⁻ regions.

The resist masks 132, 133 and 134 are removed, and a process step ofadding an n-type imparting impurity element to the active layer 106,that is to serve as the n-channel TFT, is carried out. The impurityregions 140, 141, 142 and 143 thus formed contain phosphorus in aconcentration of ½ to 1/10 (more concretely, 1×10¹⁶ to 5×10¹⁸ atoms/cm³)of the n⁻ region described above. Incidentally, the concentration of then-type imparting impurity element contained in these impurity regions140, 141, 142 and 143 is hereby expressed by “n⁻⁻”. Therefore, theimpurity regions 140, 141, 142 and 143 can be paraphrased to the “n⁻⁻regions” in this specification. In this process step, phosphorus isadded in the concentration of n⁻⁻ into all the impurity regions exceptfor the impurity region 167 that is hidden by the gate wiring. However,this concentration n⁻⁻ can be neglected because it is extremely low.

FIG. 3B shows a thermal activation step.

A protective insulation film 144, that is to serve later as a firstinter-layer insulation film, is formed. The protective insulation film144 may be a silicon nitride film, a silicon oxide film, a siliconnitride oxide film or their laminate film. The film thickness may bewithin the range of 100 to 400 nm.

A heat-treatment step is carried out in order to activate the n-type orp-type imparting impurity element added in each concentration. Thisprocess step can be conducted by a furnace annealing method, a laserannealing method, or a rapid thermal annealing method (RTA). Thisexample uses the furnace annealing method. The heat-treatment is carriedout in a nitrogen atmosphere at 300 to 650° C., preferably 400 to 550°C., and hereby 450° C., for 2 hours.

A heat-treatment is further carried out in an atmosphere containing 3 to100% hydrogen at 300 to 450° C. for 1 to 12 hours so as to hydrogenatethe active layer. This is the process step for terminating the danglingbonds of the semiconductor layer by hydrogen that is heated and excited.Plasma hydrogenation (using hydrogen that is excited by plasma) may beemployed as another means for hydrogenation.

FIG. 3C shows the formation of inter-layer insulation films,source/drain wirings, a shading film, a pixel electrode and a holdingcapacitance.

After the activation step is completed, a 0.5 to 1.5 μm-thickinter-layer insulation film 145 is formed on the protective insulationfilm 144. A laminate film comprising the protective insulation film 144and the inter-layer insulation film 145 is used as the first inter-layerinsulation film.

Thereafter, contact holes reaching the source or drain regions of theTFT are bored, and source wirings 146, 147 and 148 and drain wirings 149and 150 are formed. In this example, the source wirings and the drainwirings comprise a three-layered laminate film that is formedcontinuously by sputtering a Ti film having a thickness of 100 nm, aTi-containing aluminum film having a thickness of 300 nm and a Ti filmhaving a thickness of 150 nm. Incidentally, a laminate film of a copperfilm and a titanium nitride film may be used as the source wirings andthe drain wirings.

Next, a silicon nitride film, a silicon oxide film or a silicon nitrideoxide film is formed as a passivation film 151 to a thickness of 50 to500 nm (typically, 200 to 300 nm). When hydrogenation treatment iscarried out under this condition, desired results can be obtained forimproving characteristics of the TFT. Similar effects can be obtained,for instance, when heat-treatment is carried out in an atmospherecontaining 3 to 100% hydrogen at 300 to 450° C. for 1 to 12 hours, or bythe plasma hydrogenation method. Open portions may be formed in thepassivation film 151 at positions where contact holes for connecting thepixel electrodes to the drain wirings are to be later formed.

Next, a second inter-layer insulation film 152 made of an organic resinis formed to a thickness of about 1 μm. Polyimide, acrylic, polyamide,polyimideamide, BCB (benzocyclobutene) etc. can be used as the organicresin. The advantages brought forth by using the organic resin film arethat the film formation method is simple, the parasitic capacitance canbe reduced because a specific dielectric constant is low, and planarityis high. Organic resin films other than those described above andorganic SiO compounds can be used, too. This example uses polyimide ofthe type that can be polymerized thermally after the application to thesubstrate, and the film is formed by firing at 300° C.

Next, the shading film 153 is formed on the second inter-layerinsulation film 152 in the region that is to serve as the pixel unit.The shading film 153 is made of the element selected from the groupconsisting of aluminum (Al), titanium (Ti) and tantalum (Ta), or amaterial containing any of them as the principal component, and the filmis formed to a thickness of 100 to 300 nm. An oxide (oxide film) 154 isformed to a thickness of 30 to 150 nm (preferably, 50 to 75 nm) on thesurface of the shading film 153 by an anodic oxidation method or aplasma oxidation method. This example uses the aluminum film or the filmconsisting essentially of aluminum as the principal component for theshading film 153 and the aluminum oxide film (alumina film) for theoxide 154.

Though the insulation film is deposited only to the surface of theshading film in this example, the insulation film may be formed by thegaseous phase method such as the plasma CVD method, the thermal CVDmethod or the sputtering method. In such a case, too, the film thicknessis preferably 30 to 150 nm (preferably, 50 to 75 nm). A silicon oxidefilm, a silicon nitride film, a silicon nitride oxide film, a DLC(Diamond-like Carbon) film or an organic resin film may be used.Furthermore, a laminate film combining these films may be used, too.

Next, contact holes reaching the drain wiring 150 are formed in thesecond inter-layer insulation film 152, thereby forming a pixelelectrode 155. Incidentally, pixel electrodes 156 and 157 are the pixelelectrodes of other adjacent pixels. The pixel electrodes 155, 156 and157 are formed of a transparent conductive film in the case offabricating a transmission type liquid crystal display device, and areformed of a metal film in the case of fabricating a reflection typeliquid crystal display device. Here, a film consisting essentially of acompound between indium oxide and tin oxide (called “ITO”) is fabricatedby sputtering to a thickness of 100 nm in order to obtain thetransmission type liquid crystal display device.

At this time, the region 158 at which the pixel electrode 155 and theshading film 153 overlap with each other through the oxide 154constitutes a holding capacitance.

In this way, the CMOS circuit for forming the driving circuit and theactive matrix substrate having the pixel unit are completed on the samesubstrate. Incidentally, the n-channel TFT 181 and the p-channel TFT 182are formed in the CMOS circuit that constitutes the driving circuit, andthe pixel TFT 183 comprising the n-channel TFT is formed in the pixelunit.

In the p-channel TFT 181 of the CMOS circuit, the channel formationregion 161, the source region 162 and the drain region 163 are formed.Each of the source region 162 and the drain region 163 is formed of thep⁺⁺ region. In the n-channel TFT 182, the channel formation region 164,the source region 165, the drain region 166 and the LDD region (Lovregion) 167 that wholly overlaps with the gate wiring through the gateinsulation film are formed. At this time, the source region 165 and thedrain region 166 are the n⁺ regions, and the Lov region 167 is the n⁻region. More strictly, the drain region 166 is a (n⁻+n⁺) region.

Referring to FIG. 3C, the Lov region is shown disposed only on one sideof the channel formation region 164 (only on the drain region side) inorder to reduce the resistance component as much as possible. However,the Lov region may be disposed on both sides while sandwiching thechannel formation region 164 between them.

Formed in the pixel TFT 183 are the channel formation regions 168 and169, the source region 170, the drain region 171, the LDD regions notoverlapping with the gate wiring through the gate insulation film (thisLDD region will be called hereinafter the “Loff region”; “off”represents hereby “offset”) 172, 173, 174 and 175, and the n⁺ region 176(which is effective for reducing the OFF current value) that keepscontact with the Loff regions 173 and 174. At this time, the sourceregion 170 and the drain region 171 comprise the n⁺ region,respectively, and the Loff regions 172, 173, 174 and 175 comprise then⁻⁻ region, respectively.

This invention can optimize the structure of the TFT for forming eachcircuit in accordance with the circuit specification required by thepixel unit and by the driving circuit, and can improve operationperformance of the semiconductor device and its reliability. Speakingmore concretely, the arrangement of the LDD regions is rendereddifferent for the n-channel TFTs in accordance with the circuitspecification, and the TFT structure making the most of the high speedoperation or the countermeasure for the hot carrier and the TFTstructure making the most of the low OFF current operation areaccomplished on the same substrate because the Lov regions and the Loffregions are skillfully arranged.

In the case of the active matrix type liquid crystal display device, forexample, the n-channel TFT 182 is suitable for a logic circuit such as ashift register circuit, a frequency division circuit, a signal divisioncircuit, a level shifter circuit or a buffer circuit, for which the highspeed operation is of importance. The n-channel TFT 183 is suitable forthe pixel unit, a sampling circuit (called also a “transfer gate”), etc,for which the low OFF current operation is of importance.

The length (width) of the Lov region is from 0.5 to 3.0 μm for thechannel length of 3 to 7 μm, typically 1.0 to 1.5 μm. The length (width)of the Loff regions 172, 173, 174 and 175 disposed in the pixel TFT 183is 0.5 to 3.5 μm, typically 2.0 to 2.5 μm.

Example 2

In this example, another structure of the holding capacitance connectedto the n-channel TFT 401 of the pixel unit of the active matrixsubstrate will be explained with reference to FIG. 4. Incidentally, thesectional structure shown in FIG. 4 is entirely the same as that ofExample 1 up to the process step of forming the oxide 154, and thestructure up to this step has been explained already with reference toFIGS. 1A to 1C, 2A to 2C and 3A to 3C. Therefore, only the difference ofthis example from Example 1 will be explained.

After the shading film 153 and the oxide 154 obtained by oxidizing theshading film 153 are formed in accordance with the process steps ofExample 1, spacers 402, 403 and 404 comprising an organic resin film areformed. A film selected from the group consisting of polyimide,polyamide, polyimideamide, acrylic and BCB (benzocyclobutene) can beused for the organic resin film. Thereafter, the spacer 402, the secondinter-layer insulation film 152 and the passivation film 151 are etchedto form contact holes, and the pixel electrode 405 is formed using thesame material as that of Example 1. Incidentally, the pixel electrodes406 and 407 are the pixel electrodes of other adjacent pixels.

In this way, the holding capacitance 408 is formed in the region wherethe shading film 153 and the pixel electrode 405 overlap with each otherthrough the oxide 154. Because the spacers 402, 403 and 404 are disposedin the manner described above, short-circuit that would otherwise occurbetween the shading film 153 and each pixel electrode 405, 406 and 407can be prevented.

Incidentally, the construction of this example can be combined with theconstruction of Example 1.

Example 3

In this example, still another structure of the holding capacitanceconnected to the n-channel TFT of the pixel unit of the active matrixsubstrate will be explained with reference to FIGS. 5A to 5C.Incidentally, the sectional structure shown in FIGS. 5A to 5C is exactlythe same as that of Example 1 up to the process step of forming theshading film 153, and the structure up to this process step has beenexplained already with reference to FIGS. 1A to 1C, 2A to 2C and 3A to3C. Therefore, only the difference of this example from Example 1 willbe explained.

After the shading film 153 is formed in accordance with the processsteps of Example 1, spacers 501, 502 and 503 comprising an organic resinfilm are formed in such a manner as to cover the end portions of theshading film 153. A film selected from the group consisting ofpolyimide, polyamide, polyimideamide, acrylic and BCB (benzocyclobutene)can be used for the organic resin film (FIG. 5A).

Next, an oxide 504 is formed on the exposed surface of the shading film153 by the anodic oxidation method or the plasma oxidation method.Incidentally, the oxide 504 is not formed at the contact portions withthe spacers 501, 502 and 503 (FIG. 5B).

Next, the spacer 501, the second inter-layer insulation film 152 and thepassivation film 151 are etched to form a contact hole, and a pixelelectrode 505 is formed using the same material as that of Example 1.The pixel electrodes 506 and 507 are the pixel electrodes of otheradjacent pixels.

In this way, the holding capacitance 508 is formed in the region wherethe shading film 153 and the pixel electrode 505 overlap with each otherthrough the oxide 504. Because the spacers 501, 502 and 503 areprovided, short-circuit that would otherwise occur between the shadingfilm 153 and each pixel electrode 505, 506 and 507 can be prevented.

Incidentally, the construction of this example can be combined with theconstruction of Example 1.

Example 4

In this example, a method of fabricating an active matrix substratehaving a pixel unit and a CMOS circuit as the basic form of a drivingcircuit disposed in the periphery of the pixel unit, that are formedsimultaneously, will be explained with reference to FIGS. 6A to 6D, 7Ato 7C and 8A to 8C.

To begin with, a silicon nitride oxide film 602 a is formed as anunderlying film on a substrate 601 to a thickness of 50 to 500 nm,typically 100 nm. The silicon nitride oxide film 602 a is formed usingSiH₄, N₂O, and NH₃ as the starting material gas, and the nitrogenconcentration of this film is adjusted to at least 25 atomic % to lessthan 50 atomic %. Heat-treatment is then carried out in a nitrogenatmosphere at 450 to 650° C. in order to render the silicon nitrideoxide film 602 a compact.

A silicon nitride oxide film 602 b is further formed to a thickness of100 to 500 nm, typically 200 nm, and an amorphous semiconductor film(not shown) is continuously formed to a thickness of 20 to 80 nm. Thisexample uses an amorphous silicon film for the amorphous semiconductorfilm, but a micro-crystalline silicon film or an amorphoussilicon-germanium film may be used, as well.

The amorphous silicon film is then crystallized by crystallization meansdescribed in Japanese Patent Laid-Open No. 7-130652 (corresponding toU.S. Pat. Nos. 5,643,826 and 5,923,962), forming a crystalline siliconfilm that is not shown. The technology disclosed in this prior artreference is the crystallization means that uses catalytic elements forpromoting crystallization (at least one member selected from the groupconsisting of nickel, cobalt, germanium, tin, lead, palladium, iron andcopper; typically nickel) for crystallizing the amorphous silicon film.More concretely, the reference invention conducts heat-treatment underthe condition where the catalytic element is supported on the surface ofthe amorphous silicon film to convert the amorphous silicon film to thecrystalline silicon film.

After the crystalline silicon film is formed in this way, the remainingamorphous component is crystallized as an excimer laser beam is radiatedto improve crystallinity of the entire film. Incidentally, the excimerlaser beam may be of a pulse oscillation type or a continuousoscillation type. When the beam is processed into a linear shape andradiated, a large substrate can be processed, too.

Next, the crystalline silicon film is patterned to form active layers603, 604, 605 and 606, and a gate insulation film 607 is so formed as tocover these active layers 603 to 606. The gate insulation film 607 is asilicon nitride oxide film prepared from SiO₄ and N₂O, and is formed toa thickness of 10 to 200 nm, preferably 50 to 150 nm (FIG. 6A).

Resist masks 608, 609, 610 and 611 are then formed in such a fashion asto cover the entire surface of the active layers 603 and 606 and apartof the active layers 604 and 605 (inclusive of the channel formationregion). After an n-type imparting impurity element (phosphorus in thisexample) is doped by the ion doping method that uses phosphine (PH₃), n⁻regions 612, 613 and 614 that are to serve as the Lov region or the Loffregion are formed. Since phosphorus is added to the active layersbeneath the gate insulation film 607 through this film 607, anacceleration voltage is set to 65 keV. The concentration of phosphorusadded to the active layers is preferably within the range of 2×10¹⁶ to5×10¹⁹ atoms/cm³, and is hereby 1×10¹⁸ atoms/cm³ (FIG. 6B).

Next, tantalum nitride (TaN) is sputtered to form a first conductivefilm 615. Subsequently, a second conductive film 616 consistingessentially of aluminum (Al) as the principal component is forming to athickness of 100 to 300 nm (FIG. 6C).

The second conductive film 616 is etched to form a wiring 617. Since thesecond conductive film is made of Al in this example, a selection ratioto the TaN film as the underlying film by a phosphoric acid solution isexcellent. A third conductive film 618 of tantalum (Ta) is formed to athickness of 100 to 400 nm (to 200 nm in this example) over the firstconductive film 615 and the wiring 617. A tantalum nitride film may beformed further on this tantalum film 618 (FIG. 6D).

Next, resist masks 619, 620, 621, 622, 623 and 624 are formed. Apart ofthe first and third conductive films is etched away to form a connectionwiring 625 having a low resistance, a gate wiring 626 of the p-channelTFT and a gate wiring 627 of the pixel unit. The conductive films 628,629 and 630 are left on the region that is to serve as the n-channelTFT. The connection wiring 625 is formed at a portion at which thewiring resistance is minimized (for example, a wiring portion frominput/output terminals of external signals to input/output terminals ofthe driving circuit). Because the wiring width becomes great to acertain extent from the structural limitation, the connection wiring isnot suitable for the portion that requires a miniature wiring.

The first conductive film (TaN film) and the second conductive film (Tafilm) can be etched by a mixed gas of CF₄ and O₂. While the resist masks619, 620, 621, 622, 623 and 624 are left as they are, a process step ofdoping a p-type imparting impurity element to a part of the active layer603 at which the p-channel TFT is formed. Here, boron is used as theimpurity element, and ion doping using diborane (B₂H₆) is carried out.(Needless to say, ion implantation can be used, too.) The boronconcentration is 5×10²⁰ to 3×10²¹ atoms/cm³ (2×10²¹ atoms/cm³ in thisexample). In this way, there are formed p⁺⁺ regions 631 and 632containing boron in a high concentration (FIG. 7A).

In this process step, it is also possible to conduct the process stepthat etches the gate insulation film 107 using the resist masks 619,620, 621, 622, 623 and 624 as the mask to expose a part of the activelayer 603 and then to add boron. In this case, since the accelerationvoltage may be low, damage to the active layer is small and throughputcan be improved.

Next, after the resist masks 619, 620, 621, 622, 623 and 624 areremoved, resist masks 633, 634, 635, 636, 637 and 638 are formed afresh.They are for forming the gate wiring of the n-channel TFTs, and gatewirings 639, 640 and 641 of then-channel TFTs are formed. At this time,the gate wirings 639 and 640 are formed in such a manner as to overlapwith a part of the n⁻ regions 612, 613 and 614 (FIG. 7B).

Next, after the resist masks 633, 634, 635, 636, 637 and 638 areremoved, resist masks 642, 643, 644, 645, 646 and 647 are formed afresh.The resist masks 644 and 646 are so formed as to cover the gate wirings640 and 641 and a part of the n⁻ regions 612, 613 and 614.

An n-type imparting impurity element (phosphorus in this example) isadded in a concentration of 1×10²⁰ to 1×10²¹ atoms/cm³ (5×10²⁰ atoms/cm³in this example) to form n⁺ regions 647, 648, 649, 650, 651, 652 and 653in the active layers 604, 605 and 606 (FIG. 7C).

In this process step, it is also possible to conduct a process step thatetches away the gate insulation film 107 using the resist masks 642,643, 644, 645, 646 and 647 to expose a part of the active layers 604,605 and 606 and then adds phosphorus. In this case, since theacceleration voltage may be low, damage to the active layers is smalland throughput can be improved.

After the resist masks 642, 643, 644, 645 and 646 are removed, a processstep of adding an n-type imparting impurity element (phosphorus in thisexample) to the active layer 606, that is to serve as the n-channel TFTof the pixel unit, is carried out. In this way, n⁻⁻ regions 654, 655,656 and 657 to which phosphorus is added in a concentration of ½ to 1/10(concretely, 1×10¹⁶ to 5×10¹⁸ atoms/cm³) of the concentration of the n⁻region are formed (FIG. 8A).

In this process step, phosphorus is added in the concentration of n⁻⁻ toall the impurity regions other than the impurity regions 658, 659 and660 that are hidden by the gate wiring. In practice, the concentrationof n⁻⁻ is so low that it may be neglected. Strictly speaking, however,the regions represented by reference numerals 659 and 660 are the n⁻regions whereas the regions represented by reference numerals 661 and662 are the (n⁻+n⁻⁻) regions that contain phosphorus in a somewhathigher concentration than the n⁻ regions 659 and 660.

Next, a protective insulation film 663 having a thickness of 100 to 400nm is formed with a silicon nitride oxide film that is formed by theplasma CVD method using SiH₄, N₂O and NH₃ as the starting materials.This silicon nitride oxide film is preferably formed so that itshydrogen concentration is 1 to 30 atomic %. A silicon oxide film, asilicon nitride film and their laminate film may be used for theprotective insulation film 663.

Thereafter, a heat-treatment step is carried out so as to activate then-type or p-type imparting impurity element added in a respectiveconcentration. This step can be carried out in accordance with thefurnace annealing method, the laser annealing method or the rapidthermal annealing method (RTA method). This example employs the furnaceannealing method for the activation treatment. The heat-treatment iscarried out in a nitrogen atmosphere at 300 to 650° C., preferably 400to 550° C., and at 450° C. in this example, for 2 hours.

A heat-treatment is further carried out in an atmosphere containing 3 to100% hydrogen, at 300 to 450° C. for 1 to 12 hours so as to hydrogenatethe active layers. This is the step that terminates the dangling bondsof the semiconductor layer by hydrogen that is thermally excited. Plasmahydrogenation (using hydrogen that is excited by plasma) may be used asanother hydrogenation means (FIG. 8B).

After the activation step is completed, a 0.5 to 1.5 μm-thickinter-layer insulation film 664 is formed on the protective insulationfilm 663. A laminate film comprising the protective insulation film 663and the inter-layer insulation film 664 is used as the first inter-layerinsulation film.

Contact holes reaching the source region or the drain region of therespective TFT are bored, and the source wirings 665, 666, 667 and 668and the drain wirings 669, 670, 671 and 672 are formed. Incidentally,the drain wirings 669 and 670 are connected as the same wiring in orderto form the CMOS circuit, though they are not shown in the drawings.Connection wirings 673 and 674 that connect the input/output terminalswith one another and circuits with one another are formedsimultaneously. These wirings in this example comprise a laminate filmhaving a three-layered structure of a 100 nm-thick Ti film, a 300nm-thick Ti-containing aluminum film and a 150 nm-thick Ti film that arecontinuously formed by sputtering, though this laminate film is notshown in the drawings.

Next, a passivation film 675 is constituted by a silicon nitride film, asilicon oxide film or a silicon nitride oxide film each having athickness of 50 to 500 nm (typically, 200 to 300 nm). This passivationfilm 675 may be formed from the silicon nitride oxide film prepared fromSiH₄, N₂O and NH₃ by plasma CVD, or a silicon nitride film prepared fromSiH₄, N₂ and NH₃.

Prior to the formation of the film, a hydrogenation step is carried outby a plasma hydrogenation treatment by introducing N₂O, N₂, NH₃, or thelike. Hydrogen that is excited by this plasma treatment is supplied intothe first inter-layer insulation film. As the substrate is heated to 200to 400° C., hydrogen can be diffused into the lower layer side, too, andthe active layers can be thus hydrogenated. The fabrication condition ofthe passivation film is not particularly restrictive, but the film ispreferably a close film.

The hydrogenation step may be further carried out after the passivationfilm is formed. Similar effects can be obtained by, for example,carrying out heat-treatment in an atmosphere containing 3 to 100%hydrogen at 300 to 450° C. for 1 to 12 hours, or by the plasmahydrogenation method. In this instance, openings may be formed in thepassivation film 151 at positions where contact holes for connecting thepixel electrodes to the drain wiring are to be formed afterwards.

A second inter-layer insulation film 676 made of an organic resin isthen formed to a thickness of about 1 μm. Polyimide, acrylic, polyamide,polyimideamide or BCB (benzocyclobutene) can be used as the organicresin. The advantages brought forth by the use of the organic resin filmare that the formation method of the film is simple, the parasiticcapacitance can be reduced because the specific dielectric constant islow, and planarity is high. Organic resin films other than thosedescribed above and organic SiO compounds can be used, too. This exampleuses polyimide of the type that is thermally polymerized after beingapplied to the substrate, and the film is fabricated by firing the resinat 300° C.

Next a shading film 677 is formed on the second inter-layer insulationfilm 676 in a region that is to serve as the pixel unit. The shadingfilm 153 is a film made of the element selected from the groupconsisting of aluminum (Al), titanium (Ti) and tantalum (Ta), or a filmconsisting of any of these elements as the principal component. The filmis formed to a thickness of 100 to 300 nm. If an insulation film such assilicon oxide film is formed to a thickness of 5 to 50 nm on the secondinter-layer insulation film 676, adhesion of the shading film to beformed on the second inter-layer insulation film 676 can be improved. Ifa plasma treatment using a CF₄ gas is applied to the surface of thesecond inter-layer insulation film 676 made of the organic resin,adhesion of the shading film to be formed on this film 676 can beimproved through surface modification.

Other connection wiring can be formed besides the shading film. Forexample, the connection wiring for connecting circuits with one anotherinside the driving circuit can be formed. In this case, however, thecontact holes must be bored in advance before the materials for shapingthe shading film or the connection wiring are formed.

Next, an anodic oxide 678 is formed on the surface of the shading film677 to a thickness of 30 to 150 nm (preferably, 50 to 75 nm) by ananodic oxidation method or a plasma oxidation method (by the anodicoxidation method in this example). Since this example uses an aluminumfilm or a film consisting essentially of aluminum as the principalcomponent for the shading film 677, an aluminum oxide film (aluminafilm) is formed as the anodic oxide 678.

To conduct the anodic oxidation treatment, an ethylene glycol tartratesolution having a sufficiently low alkali ion concentration is firstprepared. This is the solution prepared by mixing a 15% aqueous ammoniumtartrate solution with ethylene glycol at a mixing ratio of 2:8, andaqueous ammonia is added to this solution to adjust the pH to 7±0.5. Aplatinum electrode to serve as a cathode is dipped into this solution,and the substrate having the shading film 677 formed thereon is thenimmersed. A predetermined DC current (several to dozens of mA) isapplied with the shading film 677 as the anode. The voltage between thecathode and the anode in the solution changes with time and with thegrowth of the oxide. However, the voltage is regulated so that thecurrent remains constant, and the voltage is kept constant at the pointwhen the voltage reaches 150 V. This constant voltage is kept for 15minutes. In this way, an anodic oxide having a thickness of 50 to 75 nmcan be formed on the surface of the shading film 677. Incidentally, thenumerical values relating to the anodic oxidation method illustratedhereby are merely illustrative, and the optimum values naturally changein accordance with the size of the device to be fabricated, and otherfactors.

This example employs the construction in which the insulation film isdisposed only on the surface of the shading film. However, theinsulation film may be formed by the gaseous phase method such as theplasma CVD method, the thermal CVD method or the sputtering method. Insuch a case, too, the film thickness is 30 to 150 nm (preferably, 50 to75 nm). The insulation film may use a silicon oxide film, a siliconnitride film, a silicon nitride oxide film, a DLC (Diamond-Like Carbon)film or an organic resin film. Furthermore, a laminate film of thesefilms may be also used.

Next, contact holes reaching the drain wiring 672 are bored in thesecond inter-layer insulation film 676 and the passivation film 675 soas to form the pixel electrode 679. Incidentally, pixel electrodes 680and 681 are the pixel electrodes of other adjacent pixels. A transparentconductive film is used as the pixel electrodes 679, 680 and 681 when atransmission type liquid crystal display device is fabricated. A metalfilm is used as the pixel electrodes when a reflection type liquidcrystal display device is fabricated. In this example, a film of acompound of indium oxide and tin oxide (ITO) is formed to a thickness of100 nm by sputtering to fabricate the transmission type liquid crystaldisplay device.

At this time, a region in which the pixel electrode 679 and the shadingfilm 677 overlap with each other through the anodic oxide 678 forms theholding capacitance.

In this way, the active matrix substrate having the CMOS circuit toserve as the driving circuit and the pixel unit on the same substrate iscompleted. In the driving circuit are formed the p-channel TFT 801 andthe n-channel TFTs 802 and 803, and in the pixel unit is formed thepixel TFT 804 comprising the n-channel TFT (FIG. 8C).

In the p-channel TFT 801 of the CMOS circuit, the channel formationregion 701, the source region 702 and the drain region 703 are formed.Each of the source region 702 and the drain region 703 is formed of thep⁺⁺ region.

In the n-channel TFT 802 are formed the channel formation region 704,the source region 705, the drain region 706, and the Lov region 707 onone of the sides of the channel formation region. At this time, thesource region 705 and the drain region 706 are formed of the (n⁻+n⁺)region, and the Lov region 707 is formed of n⁻ region. The Lov region707 is formed in such a manner as to fully overlap with the gate wiring.

In the n-channel TFT 803 are formed the channel formation region 708,the source region 709, the drain region 710, and the Lov regions 711 a,712 a and the Loff regions 711 b and 712 b on both sides of the channelformation region. In this instance, the source region 709 and the drainregion 710 are formed of the (n⁻+n⁺) region, respectively. The Lovregions 711 a and 712 a are formed of the n⁻ region, and the Loftregions 711 b and 712 b are formed of the (n⁻⁻+n⁻) region. According tothis construction, the Lov regions and the Loff regions are accomplishedbecause a part of the LDD region is so arranged as to overlap with thegate wiring.

In the pixel TFT 804 are formed the channel formation regions 713 and714, the source region 715, the drain region 716, the Loft regions 717,718, 719 and 720 and the n⁺ region 721 keeping contact with the Loftregions 718 and 719. At this time, the source region 715 and the drainregion 716 are formed of the n⁺ region, respectively, and the Loftregions 717, 718, 719 and 720 are formed of the n⁻⁻ region.

This example optimizes the structure of the TFTs for forming eachcircuit in accordance with the circuit specifications required for thepixel unit and for the driving circuit, and can improve operationperformance and reliability of the semiconductor device. Moreconcretely, the LDD region of the n-channel TFT is arranged in adifferent way in accordance with the circuit specification, and the TFTstructure that lays stress on the high-speed operation or on thecountermeasure against the hot carriers, and the TFT structure that laysstress on the low OFF current operation, are accomplished on the samesubstrate.

When the active matrix type liquid crystal display device is considered,for example, the n-channel TFT 802 is suitable for the logic circuitthat requires the high speed operation such as a shift register circuit,a frequency division circuit, a signal division circuit, a level shiftercircuit and a buffer circuit. In other words, the n-channel TFT employsthe structure that arranges the Lov region only on one of the sides (thedrain region side) of the channel formation region, and thus lays stresson the countermeasure against the hot carrier while the resistancecomponent is reduced as much as possible. This is because the functionof the source region is the same as that of the drain region in thegroup of the circuits described above and the moving direction of thecarriers (electrons) is constant. However, the Lov regions can bearranged on both sides of the channel formation region, whenevernecessary.

The n-channel TFT 803 is suitable for a sampling circuit(sample-and-hold circuit) that requires both of the countermeasureagainst the hot carriers and the low OFF current operation. In otherwords, the countermeasure against the hot carriers is achieved as theLov region is disposed and the low OFF current operation is achieved asthe Loff region is disposed. In the sampling circuit, the function ofthe source region is reversed to that of the drain region and the movingdirection of the carriers changes by 180°. Therefore, the structure musthave symmetry of line with the gate wiring as the center. Incidentally,only the Lov region is disposed depending on cases.

The n-channel TFT 804 is suitable for the pixel unit and the samplingcircuit (sample-and-hold circuit) that lays stress on the low OFFcurrent operation. In other words, the Lov region that might increasethe OFF current value is not disposed but only the Loft region isdisposed so as to attain the low OFF current operation. The LDD regionhaving a lower concentration than that of the LDD region of the drivingcircuit is used as the Loft region so that even when the ON currentvalue drops to a certain extent, the OFF current value can be reduced asmuch as possible. Furthermore, it has been continued that the n⁺ region721 is extremely effective for reducing the OFF current value.

The length (width) of the Lov region 707 of the n-channel TFT 802 may be0.5 to 3.0 μm, typically 1.0 to 1.5 μm, for the channel length of 3 to 7μm. The length (width) of the Lov regions 711 a and 712 a of then-channel TFT 803 may be 0.5 to 3.0 μm and typically 1.0 to 1.5 μm. Thelength (width) of the Loff regions 711 b and 712 b may be 1.0 to 3.5 μmand typically 1.5 to 2.0 μm. The length (width) of the Loft regions 717,718, 719 and 720 disposed in the pixel TFT 804 may be 0.5 to 3.5 μm andtypically 2.0 to 2.5 μm.

It is another feature of the present invention that the p-channel TFT801 is formed in self-alignment and the n-channel TFTs 802, 803 and 804are formed in non-self-alignment.

Incidentally, this example is based on the construction of the activematrix substrate explained in Example 1 and only the structure of then-channel TFT 803 is added to this construction. Therefore, theconditions of the thin film materials during the fabrication process,the range of the numerical values of the impurity doping process, therange of the film thickness of the thin films, and so forth, explainedin Example 1, can be as such used in this example, too. The constructionof this example can be combined with the construction of Example 2 orExample 3.

Example 5

In this example, the fabrication process of fabricating an active matrixtype liquid crystal display device from an active matrix substrate willbe explained. As shown in FIG. 9, an orientation film 901 is formed onthe substrate under the condition shown in FIG. 8C. A polyimide resin isused in most cases for the orientation film of the liquid crystaldisplay device. A transparent conductive film 903 and an orientationfilm 904 are formed on an opposing substrate 902. After the orientationfilms are formed, rubbing treatment is carried out so that the liquidcrystal molecules are oriented with a certain predetermined pre-tiltangle. The active matrix substrate having the pixel unit and the CMOScircuit formed thereon and the opposing substrate are bonded to eachother through a sealing material or a spacer (both being not shown) by aknown cell assembly step. Thereafter, a liquid crystal material 905 ischarged between both substrates and is completely sealed by a sealant(not shown). A known liquid crystal material may be used as the liquidcrystal material. In this way, the active matrix type liquid crystaldisplay device shown in FIG. 9 is completed.

Next, the construction of this active matrix type liquid crystal displaydevice will be explained with reference to a perspective view of FIG. 10and top views of FIGS. 11A and 11B. Incidentally, common referencenumerals will be used because FIGS. 10, 11A and 11B correspond to thestructural sectional view of FIGS. 6A to 6D, 7A to 7C and 8A to 8C. Thesectional structure along a line A-A′ shown in FIG. 11B corresponds tothe sectional view of the pixel unit shown in FIG. 8C.

The active matrix substrate comprises a pixel unit 1001, a scanning(gate) line driving circuit 1002 and a signal (source) line drivingcircuit 1003 that are formed on a glass substrate 601. The pixel TFT 804of the pixel unit is the n-channel TFT, and the driving circuit disposedin the periphery of the pixel unit comprises a CMOS circuit as a basiccircuit. The scanning (gate) line driving circuit 1002 and the signal(source) line driving circuit 1003 are connected to the pixel unit 1001by gate wiring 641 and source wiring 668, respectively. Connectionwirings 625 and 673 are so disposed as to extend from externalinput/output terminals 1005, to which the FPC 1004 is connected, toinput/output terminals of the driving circuit.

FIGS. 11A and 11B are top views showing a part (one pixel) of the pixelunit 1001. FIG. 11A is a top view showing in superposition the activelayer, the gate wiring and the source wiring. FIG. 11B is atop viewshowing in superposition a shading film and a pixel electrode on themembers shown in FIG. 11A. Referring to FIG. 11A, the gate wiring 641crosses the active layer 606 below it through a gate insulation film,not shown. A source region, a drain region and an Loff region comprisingan n⁻⁻ region are formed in the active layer 606, though they are notshown in the drawings. Reference numeral 1101 denotes a contact portionbetween the source wiring 668 and the active layer 606 and referencenumeral 1102 denotes a contact portion between the drain wiring 672 andthe active layer 606.

In FIG. 11B, there are formed the shading film 677 having an anodicoxide (which is not hereby shown but corresponds to the anodic oxide 678shown in FIG. 8C) formed on the pixel TFT and the pixel electrode 679,680 and 681 for each pixel. A holding capacitance 682 is fabricated bythe region in which the shading film 677 and the pixel electrode 679overlap with each other through the anodic oxide. Incidentally,reference numeral 1103 denotes a contact portion between the drainwiring 672 and the pixel electrode 679.

This example uses an alumina film having a high specific dielectricconstant of 7 to 9 for the dielectric of the holding capacitance, andcan therefore reduce the area for securing the necessary capacitance.Furthermore, because this example uses the shading film formed on thepixel TFT as one of the electrodes of the holding capacitance, it canimprove the aperture ratio of the image display part of the activematrix type liquid crystal display device.

Incidentally, the active matrix type liquid crystal display device ofthis example has been explained with reference to the constructionexplained in Example 4, but it can be freely combined with theconstruction of any of Examples 1, 2 and 3 so as to fabricate the activematrix type liquid crystal display device.

Example 6

The holding capacitance provided to each pixel of the pixel unit can beconstituted by using the electrode, that is not connected to the pixelelectrode (the shading film in the present invention), as the fixedpotential. In such a case, the shading film is preferably kept under thefloating condition (under the electrically isolated condition) or underthe common potential (at an intermediate potential of the image signalsthat are sent as data).

In this example, therefore, a connection method when the shading film isfixed to the common potential will be explained with reference to FIGS.12A and 12B. Referring to FIG. 12A, reference numeral 1201 denotes thepixel TFT that is fabricated in the same way as in Example 1, andreference numeral 1202 denotes the shading film that functions as one ofthe electrodes of the holding capacitance. The shading film 1202 extendsoutside the pixel unit and is connected to a power source line 1203 thatgives the common potential through a contact hole 1206 bored in a secondinter-layer insulation film 1204 and a passivation film 1205.

When the shading film 1202 is electrically connected to the power sourceline giving the common potential outside the pixel unit in this way, thecommon potential can be secured. In this case, therefore, a process stepof etching the second inter-layer insulation film 1204 and thepassivation film 1205 prior to the formation of the shading film 1202becomes necessary.

Referring next to FIG. 12B, reference numeral 1207 denotes the pixel TFTthat is fabricated in the same way as in Example 1, and referencenumeral 1208 denotes the shading film that functions as one of theelectrodes of the holding capacitance. The shading film 1208 extendsoutside the pixel unit and overlaps with a conductive film 1210 throughan oxide 1211 in the region that is represented by reference numeral1209. This conductive film 1210 is formed simultaneously with a pixelelectrode 1212.

The conductive film 1210 is connected to a power source line 1216 givinga common potential through a contact hole 1215 that is bored in a secondinter-layer insulation film 1213 and a passivation film 1214. At thistime, a capacitor comprising the shading film 1208, the oxide 1211 andthe conductive film 1210 is constituted in the region 1209. When drivenby an AC, this capacitor undergoes substantial short-circuit. In otherwords, since the shading film 1208 and the conductive film 1210 areelectrically connected to each other by electrostatic coupling in theregion 1209, the shading film 1208 and the power source line 1216 areconnected substantially to each other.

Since this example employs the construction shown in FIG. 12B, it canset the shading film to the common potential without increasing thenumber of process steps.

Incidentally, the construction of this example can be freely combinedwith the construction of any of Examples 1 to 5.

Example 7

FIG. 13 shows an example of the circuit construction of the activematrix substrate represented by Example 4. The active matrix substrateof this example includes a source signal line side driving circuit 1301,a gate signal line side driving circuit (A) 1307, a gate signal lineside driving circuit (B) 1311, a pre-charge circuit 1312 and a pixelunit 1306. The source signal line side driving circuit 1301 includes ashift register circuit 1302, a level shifter circuit 1303, a buffercircuit 1304 and a sampling circuit 1305. The gate signal line sidedriving circuit (A) 1307 includes a shift register circuit 1308, a levelshifter circuit 1309 and a buffer circuit 1310. The gate signal lineside driving circuit (B) 1311 has a similar construction.

A driving voltage of each shift register circuit 1302, 1308 is 5 to 16 V(typically, 10V), and the n-channel TFT used for a CMOS circuit thatconstitutes the shift register circuit has suitably the structurerepresented by reference numeral 802 in FIG. 8C.

The level shifter circuits 1303 and 1309 and the buffer circuits 1304and 1310 use a high driving voltage of 14 to 16 V. A CMOS circuitcontaining the n-channel TFT 802 shown in FIG. 8C is suitable for themin the same way as the shift register circuit. Incidentally, it iseffective to use a double-gate structure for the gate wiring so as toimprove reliability of the circuit.

The sampling circuit 1305 uses a driving voltage of 14 to 16 V. A CMOScircuit containing the n-channel TFT 803 shown in FIG. 8C is suitablebecause the source region is inverted relative to the drain region andmoreover, the OFF current value must be reduced. Incidentally, then-channel TFT and the p-channel TFT are combined with one another whenthe sampling circuit is fabricated in practice.

The pixel unit 1306 uses a driving voltage of 14 to 16 V. A lower OFFcurrent value is required for this pixel unit 1306 than for the samplingcircuit 1305. Therefore, a complete LDD structure (in which the Lovregion is not disposed) is preferably employed, and the n-channel TFT804 shown in FIG. 8C is preferably used, too.

The construction of this example can be freely combined with theconstruction of any of Examples 2 to 6.

Example 8

In this example, a process step of forming an active layer to functionas an active layer of the TFT will be explained with reference to FIGS.14A to 14E. To begin with, an underlying film 1402 comprising a 200nm-thick silicon nitride oxide film and a 50 nm-thick amorphoussemiconductor film 1403 (an amorphous silicon film in this example) arecontinuously formed on a substrate 1401 (a glass substrate in thisexample) without exposing them to the atmospheric air.

Next, an aqueous solution (an aqueous nickel acetate solution)containing 10 ppm by weight of a catalytic element (nickel in thisexample) is applied by spin coating to form a catalyticelement-containing layer 1404 on the entire surface of the amorphoussemiconductor film 1403. Examples of the catalytic elements that can beused in this example include germanium (Ge), iron (Fe), palladium (Pd),tin (Sn), lead (Pb), cobalt (Co), platinum (Pt), copper (Cu) and gold(Au) (FIG. 14A) besides nickel (Ni).

Though this example employs a spin coating as the method of addingnickel, a thin film (a nickel film in this example) of a catalyticelement may be formed by a vapor deposition or a sputtering on thesurface of the amorphous semiconductor film.

Next, prior to the crystallization step, a heat-treatment step iscarried out at 400 to 500° C. for about 1 hour so as to dissociatehydrogen from inside the film. A heat-treatment is further carried outat 500 to 650° C. (preferably at 550 to 570° C.) for 4 to 12 hours(preferably for 4 to 6 hours). In this example, this heat-treatment iscarried out at 550° C. for 4 hours to form a crystalline semiconductorfilm (a crystalline silicon film in this example) 1405 (FIG. 14B).

Next, a gettering step is carried out in order to remove nickel used inthe crystallization step from the crystalline silicon film. First, amask insulation film 1406 is formed to a thickness of 150 nm on thesurface of the crystalline semiconductor film 1405, and an opening 1407is bored by patterning. A process step of adding an element of the Group15 of the Periodic Table (phosphorus in this example) to the exposedcrystalline semiconductor film is carried out. This process step gives agettering region 1408 containing phosphorus in a concentration of 1×10¹⁹to 1×10²⁰ atoms/cm³ (FIG. 14C).

A heat-treatment is then carried out in a nitrogen atmosphere at 450 to650° C. (preferably at 500 to 550° C.) for 4 to 24 hours (preferably for6 to 12 hours). Due to this heat-treatment, nickel in the crystallinesemiconductor film moves in a direction represented by an arrow in thedrawing and is collected into the gettering region 1408 by the getteringoperation of phosphorus. In other words, since nickel is removed frominside the crystalline semiconductor film, the nickel concentration inthe crystalline semiconductor film 1409 can be lowered to 1×10¹⁷atoms/cm³ or lower, preferably 1×10¹⁶ atoms/cm³ or lower (FIG. 14D).

After the mask insulation film 1406 is removed, patterning is conductedin such a manner as to completely remove the gettering region 1408 toacquire an active layer 1410. Incidentally, though FIG. 14E shows onlyone active layer 1410, a plurality of active layers are naturally formedsimultaneously over the substrate.

Each active layer 1410 so formed comprises a crystalline semiconductorfilm having extremely high crystallinity because it uses the catalyticelement (nickel in this example) for promoting crystallization. Thecatalytic element is removed by the gettering operation of phosphorusafter crystallization, and the concentration of the catalytic elementremaining in the active layer 1410 is 1×10¹⁷ atoms/cm³ or lower,preferably 1×10¹⁶ atoms/cm³ or lower.

Incidentally, the construction of this example can be freely combinedwith the construction of any of Examples 1 to 7.

Example 9

In this example, a process step of forming an active layer to functionas an active layer of the TFT will be explained with reference to FIGS.15A to 15E. More concretely, this example employs the technologydescribed in Japanese Patent Laid-Open No. 10-247735 (corresponding toU.S. patent application Ser. No. 09/034,041).

First, an underlying film 1502 comprising a 200 nm-thick silicon nitrideoxide film and a 50 nm-thick amorphous semiconductor film (an amorphoussilicon film in this example) 1503 are formed continuously on asubstrate 1501 (a glass substrate in this example) without exposing themto the atmospheric air. Next, a mask insulation film 1504 comprising asilicon oxide film is formed to a thickness of 200 nm to form an opening1505.

Next, an aqueous solution (an aqueous nickel acetate solution in thisexample) containing 100 ppm by weight of a catalytic element (nickel inthis example) is applied by spin coating to form a catalyticelement-containing layer 1506. At this time, the catalyticelement-containing layer 1506 comes into selective contact with theamorphous semiconductor film 1503 in the region in which the opening1505 is formed. Examples of the catalytic elements that can be usedhereby include germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), lead(Pb), cobalt (Co), platinum (Pt), copper (Cu) and gold (Au), besidesnickel (Ni) (FIG. 15A).

Though this example employs a spin coating as the method of addingnickel, it is possible to employ means for forming a thin film made of acatalytic element (the nickel film in this example) on the amorphoussemiconductor film by a vapor deposition or a sputtering.

Next, prior to a crystallization step, heat-treatment is carried out at400 to 500° C. for about 1 hour to dissociate hydrogen in the film. Aheat-treatment is carried out further at 500 to 650° C. (preferably at550 to 600° C.) for 6 to 16 hours (preferably, for 8 to 14 hours). Inthis example, the heat-treatment is carried out at 570° C. for 14 hours.As a result the crystallization proceeds in a direction indicated by thearrow substantially parallel to the substrate drawn in the FIG. 15B withthe opening 1505 as the start point. A crystalline semiconductor film (acrystalline silicon film in this example) 1507, in which the crystalgrowing direction is macroscopically aligned, is thus formed (FIG. 15B).

Next, a gettering step is carried out so as to remove nickel used in thecrystallization step from the crystalline silicon film. In this example,a process step of adding an element (phosphorus in this example)belonging to the Group 15 of the Periodic Table is carried out using assuch the mask insulation film 1504 formed previously. A gettering region1508 containing phosphorus in a concentration of 1×10¹⁹ to 1×10²⁰atoms/cm³ is thus formed in the crystalline semiconductor film exposedin the opening 1505 (FIG. 15C).

Next, a heat-treatment is carried out in a nitrogen atmosphere at 450 to650° C. (preferably at 500 to 550° C.) for 4 to 24 hours (preferably for6 to 12 hours). Nickel in the crystalline semiconductor film moves in adirection indicated by the arrow drawn in the FIG. 15D due to thisheat-treatment and is collected into the gettering region 1508 by thegettering operation of phosphorus. In other words, since nickel isremoved from inside the crystalline semiconductor film, the nickelconcentration in the crystalline semiconductor film 1509 can be reducedto 1×10¹⁷ atoms/cm³ or lower, preferably 1×10¹⁶ atoms/cm³ or lower (FIG.15D).

After the mask insulation film 1504 is removed, patterning is soconducted as to completely remove the gettering region 1508 to acquirean active layer 1510. Incidentally, FIG. 15E shows only one active layer1510, but a plurality of active layers can be of course formedsimultaneously on the substrate.

The active layer 1510 formed in the way described above comprises acrystalline semiconductor film having extremely high crystallinitybecause the crystallization is effected by selectively adding thecatalytic element (nickel in this example) that promotescrystallization. More concretely, this film has a crystal structure inwhich rod-like or pillar-like crystal grains are aligned with specificdirectivity. The catalytic element is removed after the crystallizationby the gettering operation of phosphorus, and the concentration of thecatalytic element remaining in the active layer 1510 is not higher than1×10¹⁷ atoms/cm³, preferably not higher than 1×10¹⁶ atoms/cm³.

Incidentally, the construction of this example can be combined freelywith the construction of any of Examples 1 to 7.

Example 10

Examples 8 and 9 use phosphorus for gettering the catalytic element usedfor crystallizing the semiconductor film. In this example, a method ofgettering the catalytic element by the use of other elements will beexplained.

First, the crystalline semiconductor film is obtained in the same way asin Example 8 or 9. However, the substrate that can be used in thisexample is a heat-resistant substrate that can withstand a temperatureof 700° C. or more, and its typical examples include a quartz substrate,a metal substrate and a silicon substrate. The concentration of thecatalytic element (nickel, for example) used for crystallization islowered as much as possible in this example. More concretely, anickel-containing layer containing 0.5 to 3 ppm by weight is formed onthe amorphous semiconductor film and a heat-treatment is then carriedout to attain crystallization. The concentration of nickel contained inthe resulting crystalline semiconductor film is 1×10¹⁷ to 1×10¹⁹atoms/cm³ (typically, 5×10¹⁷ to 1×10¹⁸ atoms/cm³).

After the crystalline semiconductor film is formed, a heat-treatment iscarried out in an oxidizing atmosphere containing a halogen element. Thetemperature is 800 to 1,150° C. (preferably, at 900 to 1,000° C.), andthe treatment time is 10 minutes to 4 hours (preferably, 30 minutes to 1hour).

In this example, the heat-treatment is carried out in an atmospherecontaining 3 to 10 volume % of hydrogen chloride at 950° C. for 30minutes. As a result of this heat-treatment, nickel in the crystallinesemiconductor film is converted to a volatile chloride (nickel chloride)and dissociates into the treatment atmosphere. In other words, nickelcan be removed by the gettering operation of the halogen element. If thenickel concentration in the crystalline semiconductor film is too high,however, the problem develops in that an oxidation proceeds abnormallyat the segregation portion of nickel. Therefore, the concentration ofnickel used in the crystallization step must be reduced as low aspossible.

The concentration of nickel remaining in the crystalline semiconductorfilm so formed is not higher than 1×10¹⁷ atoms/cm³, preferably nothigher than 1×10¹⁶ atoms/cm³. Thereafter, the crystalline semiconductorfilm is patterned to form the active layer, which can be used as theactive layer of the TFT.

Incidentally, the construction of this example can be freely combinedwith the construction of any of Examples 1 to 9. In other words, it canbe used in combination with the gettering step by phosphorus that isdescribed in Examples 8 and 9.

Example 11

In this example, a process step for improving crystallinity of acrystalline semiconductor film (a crystalline silicon film byway ofexample) used in the present invention will be explained. First, anactive layer is formed in accordance with the step of any of Examples 8,9 and 10. However, a substrate capable of withstanding to thetemperature of 800 to 1,150° C. must be used as a substrate on whichTFTs are to be formed. Examples of such substrates include a quartzsubstrate, a metal substrate, a silicon substrate and a ceramicsubstrate (inclusive of a ceramic glass substrate).

A gate insulation film comprising a silicon nitride oxide film, asilicon oxide film or a laminate film of a silicon nitride film and asilicon oxide film is formed on the substrate. The film thickness of thegate insulation film is 20 to 120 nm (typically, 60 to 80 nm). In thisexample, the silicon oxide film is formed at 800° C. by using a mixtureof SiH₄ and N₂O as a starting material.

After the gate insulation film is formed, a heat-treatment is carriedout in an oxidizing atmosphere. The temperature is 800 to 1,150° C.(preferably, 900 to 1,000° C.) and the treatment time is 10 minutes to 4hours (preferably, 30 minutes to 1 hour). In this case, a dry oxidationmethod is the most preferred method but a wet oxidation method may beused, as well. The oxidizing atmosphere may be a 100% oxygen atmosphere,or a halogen element may be contained in the same way as in Example 10.

As a result of this heat-treatment, the active layer formed of thecrystalline semiconductor film is oxidized in the proximity of theinterface between the active layer and the gate insulation film, therebyforming a thermal oxide film. In consequence, the interface level isreduced and the particularly excellent interface performance can beobtained. Furthermore, since the active layer is oxidized, the filmthickness of the active layer is decreased. Excessive silicon that isgenerated at the time of oxidation drastically improves the defects inthe film, and a semiconductor film comes to possess an extremely smalldefect density and excellent crystallinity.

The process steps of this example are regulated, when the example isworked in practice, so that the final film thickness of the active layeris 20 to 60 nm and that of the gate insulation film is 50 to 150 nm(typically, 80 to 120 nm). In order to make the most of the reducingeffect of the defect density, it is preferred to oxidize the activelayer by at least 50 nm.

An n⁻ region that is to serve as the Lov region is then formed by dopingan n-type imparting impurity element. Further, a heat-treatment iscarried out in an inert atmosphere at 700° C. to 950° C. (morepreferably at 750° C. to 800° C.) for the purpose of activating then-type imparting impurity element. The process steps subsequent to theheat-treatment are followed by the process steps subsequent to FIG. 1Cof Example 1 or the process steps subsequent to FIG. 6C of Example 4.

The crystal structure of the active layer after these process steps ofthis example becomes a peculiar crystal structure having continuity inthe crystal lattice. The feature will be explained next.

The active layer formed by the steps described above has microscopicallya crystal structure of the aggregate of a plurality of needle-like orrod-like crystals (hereinafter called the “rod-like crystals”). This canbe continued easily by the observation through TEM (transmissionelectron microscope).

It has been confirmed through an electron diffraction and a X-raydiffraction that the surface (the channel formation portion) of theactive layer has a {110} plane as a main orientation plane, though somevariances exist in the crystal axes. The inventors of the presentinvention have examined in detail an electron diffraction photographhaving a spot diameter of about 1.5 μm and have continued that thediffraction spots corresponding to the {110} plane appear beautifullybut each dot has a distribution on the same concentric circle.

The inventors of the present invention have also observed the crystalgrain boundary formed by the contact portions of the individual rod-likecrystals through HR-TEM (high-resolution transmission electronmicroscope) and have confirmed that continuity of the crystal latticeexists in the crystal grain boundary. This can be confirmed easily fromthe fact that the lattice fringes are continuously linked with oneanother in the crystal grain boundary.

Incidentally, continuity of the crystal lattice in the crystal grainboundary results from the fact that its crystal grain boundary is thegrain boundary that is called a “planar grain boundary”. The definitionof the planar grain boundary in this specification corresponds to theterm “planar boundary” described in “Characterization of High-EfficiencyCast-Si Solar Cell Wafers by MBIC Measurement”, by Ryuichl Shimokawa andYutaka Hayashi, Japanese Journal of Applied Physics. Vol. 27, No. 5, pp.751-758, 1988.

According to the article mentioned above, the term “planar boundary”includes a twin boundary, a special laminar defect, a special twistboundary, and so forth. This planar boundary has a feature in that it iselectrically inactive. In other words, though it is a crystal grainboundary, the planar boundary does not function as a trap that impedesmovement of the carriers. For this reason, it can be regarded as beingsubstantially absent.

Particularly when the crystal axis (an axis perpendicular to the crystalplane) is the <110> axis, the {211} twin boundary is also calledcorrespondence boundary Σ3. It is known that the Σ value is a parameteras the index that represents the degree of matching of thecorrespondence boundary, and smaller this Σ value, the higher matchingthe grain boundary has.

As a result of detailed observation of the crystalline silicon filmobtained by working this example through TEM, the inventors of thepresent invention have clarified that almost all of the crystal grainboundary (at least 90%, typically at least 95%) is the Σ3 correspondenceboundary, that is, the {211} twin boundary.

It is known that when the plane orientation of both of two crystals is{110} in the crystal grain boundary formed between two crystal grains,the grain boundary becomes the Σ3 correspondence boundary when the angleθ between the lattice fringes corresponding to the {111} plane is 70.5°.

In the crystalline silicon film of this example, each lattice fringe ofthe adjacent crystal grain in the crystal grain boundary exactlycontinues one another at an angle of about 70.5°. The present inventorshave reached from this fact the conclusion that this crystal grainboundary is the {211} twin boundary.

Incidentally, when the angle θ is 38.9°, the grain boundary becomes thecorrespondence boundary of Σ9, and such other boundaries also exist inthis film.

Such a crystal structure (speaking more strictly, the structure of thecrystal grain boundary) represents that two different crystal grains arebonded to each other with extremely high matching in the crystal grainboundary. In other words, this is the crystal structure in which thecrystal lattices continue one another continuously in the crystal grainboundary, and the trap level resulting from the crystal defect or thelike is extremely difficult to be created. Therefore, the semiconductorthin film having such a crystal structure can be regarded as a film nothaving substantially the crystal grain boundary.

Furthermore, the TEM observation reveals that the defects existing inthe crystal grains are almost extinguished as a result of aheat-treatment at a temperature as high as 700 to 1,150° C. (thatcorresponds to the thermal oxidation step or to the gettering step inthis example). This is clear from the fact that the number of defectsafter the heat-treatment step becomes drastically smaller than that ofbefore the heat-treatment.

The difference of the number of defects appears as the difference of thespin density in electron spin resonance (ESR). It has been found out atpresent that the spin density of the crystalline silicon film formed bythe process steps of this example is not greater than 5×10¹⁷ spins/cm³(preferably, not greater than 3×10¹⁷ spins/cm³). However, because thismeasurement value is approximate to the detection limit of existingmeasuring instruments, the practical spin density is expected to befurther lower.

From the observation described above, it may be possible to believe thatthe crystalline silicon film obtained by this example is substantiallyfree from the crystal grain boundary in the crystal grains, and is asingle crystal silicon film or a substantial single crystal siliconfilm.

(Observation of Electrical Characteristics of TFT):

The TFT using the active layer of this example exhibits the electriccharacteristics approximate to those of a MOSFET. The following data canbe obtained from the TFT fabricated tentatively by the present inventors(with the proviso that the film thickness of the active layer is 30 nmand the film thickness of the gate insulation film is 100 nm).

(1) A sub-threshold coefficient as an index of switching performance(rapidness of ON/OFF switching operation) is as small as 60 to 100mV/decade (typically, 60 to 85 mV/decade) in both the n-channel TFT andthe p-channel TFT.(2) Field effect mobility (μ_(FE)) as an index of the operation speed ofthe TFT is as great as 200 to 650 cm²/Vs (typically, 300 to 500 cm²/Vs)for the n-channel TFT and 100 to 300 cm²/Vs (typically, 150 to 200cm²/Vs) for the p-channel TFT.(3) A threshold voltage (V_(th)) as an index of the driving voltage ofthe TFT is as small as −0.5 to 1.5 V for the n-channel TFT and −1.5 to0.5 V for the p-channel TFT.

As described above, it has been confirmed that extremely excellentswitching characteristics and high-speed operation characteristics canbe accomplished. Incidentally, the construction of this example can befreely combined with the construction of any of Examples 1 to 10. It isof importance, however, that this example uses the catalytic element,that promote crystallization as illustrated in Examples 8 to 10, forcrystallizing the amorphous semiconductor film.

Example 12

In this example, means for gettering the catalytic element (nickel inthis example by way of example) used for crystallization from thecrystalline semiconductor film (the crystalline silicon film, by way ofexample) that is crystallized by the means of Example 8 or 9 isexplained. Incidentally, this explanation will be given with referenceto FIGS. 16A to 16C.

First, the condition shown in FIG. 2B is reached in the same way as inExample 1. Next, phosphorus is added in the same way as the process stepshown in FIG. 2C. In this instance, this example uses a resist mask 1601shown in FIG. 16A in place of the resist mask 132 shown in FIG. 2C. Inother words, whereas the resist mask is so disposed in FIG. 2C as tocover the entire region that serves as the p-channel TFT, the resistmask is formed in FIG. 16A in such a manner as not to hide the endportion of the p⁺⁺ regions.

Phosphorus is added under this condition in the same way as the stepshown in FIG. 2C. As a result, phosphorus is added also to the endportions of the p⁺⁺ regions 124 and 125 of the p-channel TFT, and(p⁺⁺+n⁺) regions 1602 and 1603 are thus formed. However, the p-typeimparting impurity element contained in the p⁺⁺ regions is added in asufficiently higher concentration than phosphorus contained in the n⁺region. Therefore, these regions can be kept as the p⁺⁺ regions.

Next, after the resist masks 1601, 133 and 134 are removed, thephosphorus-doping step is carried out in the same concentration as thatof FIG. 3A of Example 1. As a result, the n⁻⁻ regions 140, 141, 142 and143 are formed (FIG. 16B).

The activation step of the impurity element (phosphorus or boron) addedis then carried out in the same way as in the step FIG. 3B of Example 1.In this example, the activation step is preferably conducted by means ofa furnace annealing or a lamp annealing. When the furnace annealing isemployed, the heat-treatment is carried out at 450 to 650° C.,preferably at 500 to 550° C., and 500° C. in this Example, for 4 hours(FIG. 16C).

In this example, the source regions or the drain regions of both then-channel TFT and the p-channel TFT always include the region thatcontains phosphorus in the concentration corresponding to the n⁺ region.For this reason, the nickel-gettering effect by phosphorus can beobtained in the heat-treatment step for thermal activation. In otherwords, nickel moves from the channel formation region in the directionindicated by arrow drawn in FIG. 16C, and is gettered by the operationof phosphorus contained in the source region or the drain region.

When this example is executed, the activation step of the impurityelement added to the active layer functions also as the gettering stepof the catalytic element used for crystallization. As a result, theprocess steps can be simplified effectively.

The construction of this example can be freely combined with theconstruction of any of Examples 1 to 11. However, this example providesthe technology that is effective when the catalytic element thatpromotes crystallization is used for crystallizing the amorphoussemiconductor film.

Example 13

In this example, explanation will be given with reference to FIGS. 17Aand 17B about the case where the construction of the pixel unit isdifferent from the construction of Example 5 (see FIGS. 11A and 11B).Incidentally, since the basic construction is the same as theconstruction of Examples 4 and 5, the same reference numeral will beused to identify the same portion.

FIG. 17A is a sectional view of the pixel unit in this example. Thisexample has the feature in that a gate wiring 1700 (except for theoverlapping portion with the active layer) is formed by laminating afirst conductive film 1701, a second conductive film 1702 and a thirdconductive film 1703. This gate wiring 1700 is formed simultaneouslywith the connection wiring 625 explained in Example 4. Therefore, thefirst conductive film is consisting essentially of tantalum nitride asthe principal component, the second conductive film consists essentiallyof aluminum as the principal component and the third conductive film isthe tantalum film.

The top view at this time is shown in FIG. 17B. The portions of the gatewiring, that overlap with the active layer (that may be called the “gateelectrodes”), 1704 a and 1704 b have a laminate structure of the firstand third conductive films. On the other hand, the gate wiring 1700 hasa greater wiring width than the gate wirings 1704 a and 1704 b and has athree-layered structure as shown in FIG. 17A. In other words, among thegate wirings, the portions that are merely used for the wiringpreferably employ the construction of this example in order to reducethe wiring resistance as much as possible.

Incidentally, the construction of this example may be freely combinedwith the construction of any of Examples 1 to 12.

Example 14

In this example, explanation will be given with reference to FIGS. 18Ato 18C about the case where the TFT is fabricated in the process stepsdifferent from those of Example 4. Since the intermediate steps are thesame as those of Example 4, the same reference numeral will be used forthe same process step. The impurity element added is the same as theimpurity element used in Example 4, by way of example.

First, the condition shown in FIG. 7B is reached in accordance with thesteps of Example 4. This condition is shown in FIG. 18A in this example.Next, the resist masks 633, 634, 635, 636, 637 and 638 are removed, andthe phosphorus doping step is carried out to form the n⁻⁻ region. Thedoping condition is the same as that of the process step of Example 4shown in FIG. 8A. In FIG. 18B, the regions represented by referencenumerals 1801, 1802 and 1803 are the regions in which phosphoruscorresponding to the n⁻⁻ region is added to the n⁻ region. Referencenumerals 1804, 1805 and 1806 denote the n⁻⁻ regions that serve as theLoff region of the pixel TFT (FIG. 18B).

Next, resist masks 1807, 1808, 1809, 1810 and 1811 are formed, andphosphorus is added under the same condition as that of FIG. 7C. Thisprocess step provides the regions 1812, 1813, 1814, 1815, 1816, 1817 and1818 to which phosphorus is added in a high concentration (FIG. 18C).

Thereafter, the process steps of FIG. 8B and so on are carried out inaccordance with the process steps of Example 4, and the pixel unithaving the structure explained with reference to FIG. 8C can beobtained. When this example is employed, phosphorus in the concentrationcorresponding to the n⁺ region is not added to the source and drainregions of the p-channel TFT that constitute the CMOS circuit.Therefore, the boron concentration necessary for the p⁺⁺ addition stepmay be low, and throughput can be improved. If phosphorus is added tothe end portions of the p⁺⁺ regions of the n-channel TFT in the processstep shown in FIG. 18C, the gettering step of Example 12 can be carriedout.

When the n⁺ region or the p⁺⁺ region that constitutes the source regionor the drain region is formed, it is possible to etch the gateinsulation film to expose a part of the active layer before the impurityelement is added, and then to add the impurity element to the portion soexposed. In this case, since the acceleration voltage may be low, damageto the active layer is small and throughput can be improved.

When this example is executed, the concentration of the impurity elementcontained in the impurity regions formed finally in the active layer,may be sometimes different from that of Example 4. However, since thesubstantial function of each impurity region remains unchanged, theexplanation of the construction of FIG. 8C can be as such applied to theexplanation of the final construction of this example. The constructionof this example can be applied to Example 1 or 4, and can be freelycombined with the construction of any of Examples 2, 3 and 5 to 13.

Example 15

In this example, explanation will be given with reference to FIGS. 19Ato 19C on the case where the TFT is fabricated in the process stepsdifferent from those of Example 4. Since these steps up to theintermediate steps are the same as those of Example 4, the samereference numeral will be used for the same process step. The impurityelement added is the same as the impurity element used in Example 4, byway of example.

First, the condition shown in FIG. 6D is reached in accordance with theprocess steps of Example 4. Next, the gate wiring of the n-channel TFTand other connection wirings are formed. In FIG. 19A, reference numerals1901 and 1902 denote connection wirings and reference numerals 1903,1904 and 1905 denote gate wirings of the n-channel TFT. Referencenumeral 1906 denotes a conductive film for forming the gate wiring ofthe p-channel TFT.

Next, resist masks 1907, 1908, 1909, 1910 and 1911 are formed, andphosphorus is added under the same condition as that of the step of FIG.7C in Example 4. In this way, there are formed the impurity regions1912, 1913, 1914, 1915, 1916, 1917 and 1918 containing phosphorus in ahigh concentration (FIG. 19A).

After the resist masks 1907, 1908, 1909, 1910 and 1911 are removed,resist masks 1919, 1920, 1921, 1922, 1923 and 1924 are formed afresh,and a gate wiring 1925 of the p-channel TFT is formed. Boron is addedunder the same condition as that of FIG. 7A, forming p⁺⁺ regions 1926and 1927 (FIG. 19B).

After the resist masks 1919, 1920, 1921, 1922, 1923 and 1924 areremoved, phosphorus is added under the same condition as that of FIG.8A. As a result, the (n⁻+n⁻⁻) regions 1930 and 1931 and the n⁻⁻ regions1932, 1933, 1934 and 1935 are formed (FIG. 19C).

Thereafter, the process steps of FIG. 8B and so on are carried out inaccordance with Example 4, and the pixel unit having the constructionexplained with reference to FIG. 8C can be obtained. When this exampleis employed, the construction becomes the one in which phosphorus havingthe concentration corresponding to the n⁺ region is not added to thesource and drain regions of the p-channel TFT that constitutes the CMOScircuit. For this reason, the boron concentration required for the p⁺⁺addition step may be low, and throughput can be improved.

When the n⁺ region or the p⁺⁺ region that constitutes the source ordrain region is formed, it is possible to etch the gate insulation filmso as to expose a part of the active layer before the addition of theimpurity element, and then to add the impurity element to the portion soexposed. In this case, since the acceleration voltage may be low, damageto the active layer is small and throughput can be improved.

When this example is executed, there may be the case where theconcentration of the impurity element contained in the impurity regionsformed finally in the active layer is different from that of Example 4.However, because the substantial function of each impurity regionremains unchanged, the explanation of the construction of FIG. 8C can beapplied as such to the explanation of the final construction obtained byexecuting this example. The construction of this example can be appliedto the construction of Example 1 or 4, and can be freely combined withthe construction of any of Examples 2, 3, 5 to 11 and 13.

Example 16

In this example, explanation will be given with reference to FIGS. 20Ato 20C on the case where the TFT is fabricated in the different processorder as those of Example 4. Incidentally, the same reference numeralwill be used in the same process steps because the process steps up tothe intermediate steps are the same as those of Example 4. The impurityelement added is also the same as that of Example 4, by way of example.

First, the condition shown in FIG. 6D is reached in accordance with theprocess steps of Example 4, and then the condition shown in FIG. 19A isreached in accordance with the process steps of Example 15. Thiscondition is shown in FIG. 20A in this example. Incidentally, referencenumerals used in FIG. 20A are the same as those used in FIG. 19A.

After the resist masks 1907, 1908, 1909, 1910 and 1911 are removed,phosphorus is added under the same condition as that of FIG. 8A. As aresult, (n⁻+n⁻⁻) regions 2001 and 2002 and the n⁻⁻ regions 2003, 2004,2005 and 2006 are formed (FIG. 20B).

Next, resist masks 2007, 2008, 2009, 2010, 2011 and 2012 are formed, anda gate wiring 2013 of the p-channel TFT is formed. Boron is added underthe same condition as that of FIG. 7A, thereby forming the p⁺⁺ regions2014 and 2015 (FIG. 20C).

Thereafter, the process steps of FIG. 8B and so on are carried out inaccordance with Example 4, and the pixel unit having the constructionexplained with reference to FIG. 8C can be obtained. When this exampleis employed, the construction becomes the one in which phosphorus is notat all added to the source and drain regions of the p-channel TFT thatforms the CMOS circuit. Therefore, the boron concentration necessary forthe p⁺⁺ addition step may be low, and throughput can be improved.

When the n⁺ region or the p⁺⁺ region that constitutes the source regionor the drain region is formed, the gate insulation film may be etchedaway before the addition of the impurity element so as to expose a partof the active layer and then the impurity element may be added to theportion so exposed. In this case, since the acceleration voltage may below, damage to the active layer is small and throughput can be improved.

When this example is executed, there may be the case where theconcentration of the impurity element contained in the impurity regionsformed finally in the active layer is different from that of Example 4due to the change of the process order. However, because the substantialfunction of each impurity region remains unchanged, the explanation ofthe construction of FIG. 8C can be applied as such to the explanation ofthe final construction obtained by this example. The construction ofthis example can be applied to Example 1 or 4, or can be freely combinedwith the construction of any of other Examples 2, 3, 5 to 11 and 13.

Example 17

In this example, explanation will be given with reference to FIGS. 21Ato 21D on the case where the TFT is fabricated in the different processorder from that of Example 4. Incidentally, the process steps are thesame as those of Example 4 up to the intermediate steps, the samereference numeral is used in the same process step. The impurity elementadded is the same as that of Example 4 by way of example.

First, the condition shown in FIG. 6D is reached in accordance withExample 4. Next, the gate wiring of then-channel TFT and otherconnection wirings are formed in the same way as in FIG. 7B withoutconducting the process step shown in FIG. 7A (the formation step of thegate wiring of the p-channel TFT and the p⁺⁺ regions). Incidentally, thesame reference numerals are used in FIG. 21A as those in FIG. 7B. As tothe region that functions as the p-channel TFT, however, a resist mask2101 is formed, and a conductive film 2102 that will later serve as thegate wiring of the p-channel TFT is left.

While the resist mask is left unremoved, phosphorus is added under thesame condition as that of FIG. 8A. As a result, there are formed(n⁻+n⁻⁻) regions 2103, 2104 and 2105 and n⁻⁻ regions 2106, 2107 and 2108(FIG. 21B).

Next, resist masks 2109, 2110, 2111, 2112 and 2113 are formed, andphosphorus is added under the same condition as that of FIG. 7C ofExample 4. In this way, impurity regions 2114, 2115, 2116, 2117, 2118,2119 and 2120 containing phosphorus in a high concentration are formed(FIG. 21C).

After the resist masks 2109, 2110, 2111, 2112 and 2113 are removed,resist masks 2121, 2122, 2123, 2124, 2125 and 2126 are formed afresh,and a gate wiring 2127 of the p-channel TFT is formed. Boron is addedunder the same condition as that of FIG. 7A, thereby forming p⁺⁺ regions2128 and 2129 (FIG. 21D).

Thereafter, the process steps after the step shown in FIG. 8B arecarried out in the same way as in Example 4, and the pixel unit havingthe construction explained with reference to FIG. 8C can be obtained.When this example is employed, the construction becomes the one in whichphosphorus is not at all added into the source and drain regions of thep-channel TFT that constitutes the CMOS circuit. Therefore, the boronconcentration necessary for the p⁺⁺ addition step may be low, andthroughput can be improved.

When the n⁺ region or the p⁺⁺ region that constitutes the source regionor the drain region is formed, the gate insulation film may be so etchedas to expose a part of the active layer before the addition of theimpurity element and the impurity element may be added to the portion soexposed. In this case, since the acceleration voltage may be small,damage to the active layer is small and throughput can be improved.

When this example is executed, there may be the case where theconcentration of the impurity element contained in the impurity regionsformed finally in the active layer is different from that of Example 4because the process order changes. However, since the substantialfunction of each impurity region remains unchanged, the explanation ofthe construction of FIG. 8C can be applied as such to the finalconstruction obtained by this example. The construction of this examplecan be applied to the construction of Example 1 or 4, or can be freelycombined with the construction of any of other Examples 2, 3, 5 to 11and 13.

Example 18

In this example, explanation will be given with reference to FIGS. 22Ato 22C on the case where the TFT is fabricated by different processorder from those of Example 4. Incidentally, since the process steps upto the intermediate step are the same as those of Example 4, the samereference numerals are used in the same process step. The impurityelement added is also the same as that of Example 4, by way of example.

First, the condition shown in FIG. 6D is reached in accordance withExample 4, and the condition shown in FIG. 21B is reached in accordancewith Example 17. In this example, this condition is shown in FIG. 22A.Incidentally, the reference numerals used in FIG. 22A are the same asthose of FIG. 21B.

After the resist masks are removed, resist masks 2201, 2202, 2203, 2204,2205 and 2206 are formed afresh, and a gate wiring 2207 of the p-channelTFT is formed. Boron is then added under the same condition as that ofFIG. 7A, thereby forming p⁺⁺ regions 2208 and 2209 (FIG. 22B).

Next, resist masks 2210, 2211, 2212, 2213 and 2214 are formed, andphosphorus is added in the same way as in FIG. 7C. In this way, impurityregions 2215, 2216, 2217, 2218, 2219, 2220 and 2221 containingphosphorus in a high concentration are formed (FIG. 22C).

Thereafter, the process steps of FIG. 8B and so on are carried out inaccordance with Example 4, and the pixel unit having the constructionexplained with reference to FIG. 8C can be obtained. When this exampleis employed, the construction becomes the one in which phosphorus is notat all added to the source and drain regions of the p-channel TFT thatconstitutes the CMOS circuit. Therefore, the boron concentrationnecessary for the p⁺⁺ addition step may be small, and throughput can beimproved. If phosphorus is added also to the end portions of the p⁺⁺regions 2208 and 2209 in the step shown in FIG. 22C, the gettering stepof Example 12 can be carried out.

When the n⁺ region or the p⁺⁺ region that constitutes the source regionor the drain region is formed, the gate insulation film may be so etchedas to expose a part of the active layer before the addition of theimpurity element. The impurity element may be then added to the portionso exposed. In this case, since the acceleration voltage may be low,damage to the active layer is small and throughput can be improved.

When this example is executed, there may be the case where theconcentration of the impurity element contained in the impurity regionsformed finally in the active layer is different from that of Example 4because the process order changes. However, since the substantialfunction of each impurity region remains unchanged, the explanation ofthe construction of FIG. 8C can be as such applied to the explanation ofthe final construction obtained by this example. The construction ofthis example can be applied to the construction of Example 1 or 4, andcan be freely combined with the construction of any of other Examples 2,3 and 5 to 13.

Example 19

The fabrication steps illustrated in Examples 4 and 14 to 18 are basedon the premise that the n⁻ region, which is to later function as the Lovregion, is formed in advance before the gate wiring of the n-channel TFTis formed. These process steps are characterized also in that both p⁺⁺regions and the n⁻⁻ regions are formed in self-alignment.

However, the effect of the present invention can be acquired if thefinal construction is the one that is shown in FIG. 3C or FIG. 8C, andthe process steps up to the final construction are not particularlyrestrictive. Therefore, the p⁺⁺ regions and the n⁻⁻ regions can beformed in some cases using resist masks. In such a case, the examples ofthe fabrication steps are not limited to Examples 4 and 14 to 18 but canbe combined in every possible combination.

In order to add the impurity element for imparting one conductivity typeto the active layer that is the active layer of the TFT, four processsteps, that is, the formation of the n⁻ regions, the formation of the n⁺regions, the formation of the n⁻⁻ regions and the formation of the p⁺⁺regions, are necessary in the present invention. Therefore, there are 24orders of the process steps in all by merely changing the order of thesefour steps. Examples 4 and 14 to 18 represent six orders among them.However, because the effects of the present invention can be obtained inall of the remaining 18 orders, the impurity regions may be formed inany of the orders.

When the n⁺ region or the p⁺⁺ region that constitutes the source regionor the drain region is formed, the gate insulation film may be etched insuch a manner as to expose a part of the active layer before theaddition of the impurity element. The impurity element may then be addedto the portion so exposed. In this case, since the acceleration voltagemay be low, damage to the active layer is small and throughput can beimproved.

The construction of this example can be freely combined with thecombination of any of Examples 2 to 11 and 13. It can be combined alsowith Example 12 depending on the order of the process steps.

Example 20

In this example, explanation will be given on the case where the presentinvention is used for a bottom gate TFT. More concretely, FIG. 23 showsthe case where the present invention is used for an inverted staggertype TFT. The inverted stagger type TFT does not have a remarkabledifference from the top gate type TFT of the present invention exceptfor the positional relationship between the gate wiring and the activelayer is different. In this example, therefore, explanation will begiven particularly on the remarkable difference from the constructionshown in FIG. 8C and the explanation of the rest of the portions will beomitted because they are the same as those shown in FIG. 8C.

In FIG. 23, reference numerals 11 and 12 denote a p-channel TFT and ann-channel TFT of a CMOS circuit that constitutes a shift registercircuit or the like, respectively. Reference numeral 13 denotes ann-channel TFT for forming a sampling circuit or the like, and referencenumeral 14 denotes an n-channel TFT for forming a pixel unit. These thinfilm transistors are formed over the substrate on which an underlyingfilm is formed.

Reference numeral 15 denotes a gate wiring of the p-channel TFT 11 andreference numeral 16 denotes a gate wiring of the n-channel TFT 12.Reference numeral 17 denotes a gate wiring of the n-channel TFT 13 andreference numeral 18 denotes a gate wiring of the n-channel TFT 14. Eachof these gate wirings can be formed by using the same material as thatof the gate wiring explained in Example 4. Reference numeral 19 denotesa gate insulation film, which can be formed by using the same materialas that of Example 4, too.

An active layer of each TFT 11, 12, 13 and 14 is formed over the gatewirings and the gate insulation film described above. A source region20, a drain region 21 and a channel formation region 22 are formed inthe active layer of the p-channel TFT 11.

A source region 23, a drain region 24, an LDD region (an Lov region 25in this case) and a channel formation region 26 are formed in the activelayer of the n-channel TFT 12.

A source region 27, a drain region 28, LDD regions (Lov regions 29 a, 30a and Loff regions 29 b, 30 b in this case) and a channel formationregion 31 are formed in the active layer of the n-channel TFT 13.

A source region 32, a drain region 33, LDD regions (Loff regions 34, 35,36 and 37 in this case), channel formation regions 38, 39 and an n⁺region 40 are formed in the active layer of the n-channel TFT 14.

Incidentally, insulation films represented by reference numerals 41, 42,43, 44 and 45 are formed in order to protect the channel formationregions and to form the LDD regions.

As described above, the present invention can be easily applied to thebottom gate type TFT typified by the inverted stagger type TFT. Tofabricate the inverted stagger type TFT of this example, the processsteps described in other Examples of this specification may be appliedto the known fabrication process of the inverted stagger type TFT. Theconstruction of this example can also be applied to the active matrixtype liquid crystal display device illustrated in Examples 5 and 7.

Example 21

In this example, explanation will be given on the case where the presentinvention is applied to a reflection type liquid crystal display devicefabricated on a silicon substrate (a silicon wafer). This example can beexecuted by adding an n-type or p-type imparting impurity element to thesilicon substrate in place of the active layer comprising thecrystalline silicon film in Example 1 or 4 so as to accomplish the TFTstructure of the present invention. Since the liquid crystal displaydevice is of the reflection type, a metal film having a high reflectionfactor is used for the pixel electrode.

In other words, the LDD regions of the n-channel TFTs that include atleast the pixel unit and the driving circuit on the same substrate andform the driving circuit are arranged in such a fashion that at least apart or the entire part thereof overlap with the gate wirings. The LDDregions of the pixel TFTs that constitute the pixel unit are arranged insuch a fashion as not to overlap with the gate wirings. Furthermore, theLDD regions of the n-channel TFTs that constitute the driving circuitcontain the n-type imparting impurity element in a higher concentrationthan the LDD regions of the pixel TFTs.

Incidentally, the construction of this example can be freely combinedwith the construction of any of Examples 1 to 7 and 13 to 19.

Example 22

In Examples 1 to 21, explanation has been given on the premise that theLov regions and the Loff regions are arranged only in the n-channel TFTsand their positions are used properly in accordance with the circuitspecification. This may hold true of the p-channel TFT when the TFT sizebecomes small (the channel length becomes short).

Namely, when the channel length is 2 μm or less, the short channeleffect becomes remarkable, and it becomes necessary from time to time todispose the Lov region also in the p-channel TFT. In other words, thep-channel TFT in the present invention is not limited particularly tothe structure described in Examples 1 to 21 but may have the samestructure as that of the n-channel TFT.

Needless to say, the construction of this example can be applied to theconstruction of any of Examples 1 to 21 and to their combinations.

Example 23

FIG. 33 shows a graph of a relation between drain current (ID) and gatevoltage (VG) of the n-channel TFT 802 fabricated by the process stepsaccording to the Example 4. Hereinafter, the graph is called as ID-VGcurve. FIG. 33 further shows a graph of a relation between field effectmobility (μ_(FE)) and the gate voltage (VG) of the n-channel TFT 802.Here, a source voltage (VS) is 0V and a drain voltage (VD) is 1V or 14V.In this connection, the n-channel TFT 802 has a channel length (L) of 8μm, a channel width (W) of 7.5 μm and a thickness of a gate insulationfilm (Tox) of 115 nm.

The bold lines represent the first ID-VG curve prior to a stress test,and the dotted lines represent the second ID-VG curve subsequent to thestress test in FIG. 33. Because little change is observed between thefirst ID-VG curve and the second ID-VG curve, we find that thedegradation owing to hot carriers is restricted. The stress test is thetest for accelerating the degradation owing to hot carriers by applyinga source voltage of 0V, a drain voltage of 20V and a gate voltage of 2Vfor 60 seconds at a room temperature.

FIG. 34 shows the change of degradation rate of the field effectmobility (μ_(FE)) dependent on the length of the Lov region. Thedegradation rate of the μ_(FE) is represented as a following expression.

1−(μ_(FE) prior to the stress test/μ_(FE) subsequent to the stresstest)×100

As a result, we find that the degradation of the a μ_(FE) owing to hotcarriers is restricted when the length of the Lov region is 0.5 μm ormore (preferably, 1.0 μm or more).

FIGS. 35A and 35B show the result of along time reliability test withrespect to the liquid crystal display device fabricated by the processsteps in accordance with the Examples 4 and 5. The reliability test isperformed in an atmosphere of 85° C. The power source of a first shiftregister constituting a source side driving circuit is kept at apositive power source 9.6V, a first negative power source −2.4V and asecond negative power source −9.6V during the reliability test; thepower source of a second shift register constituting a gate side drivingcircuit is kept at a positive power source 9.6V, a first negative powersource −2.4V and a second negative power source −11.0V during thereliability test.

FIG. 35A shows the time dependent change of current consumption (S_IDD)in the case of the first shift register constituting the source sidedriving circuit, and little change is observed until 3000 hours. FIG.35B shows the time dependent change of the lowest operation voltage(S_VDD) in the case of the first shift register constituting the sourceside driving circuit (the lowest voltage which the first shift registeroperates), and little change is also observed until 3000 hours. In thesecond shift register constituting the gate side driving circuit, almostthe same results as the FIGS. 35A and 35B are obtained although notshown here.

Example 24

FIG. 36 shows a graph of a relation between drain current (ID) and gatevoltage (VG) of the n-channel TFT (the same structure as the n-channelTFT 802) fabricated by the process steps according to the Example 11.FIG. 33 further shows a graph of a relation between field effectmobility (μ_(FE)) and the gate voltage (VG) of the n-channel TFT. Here,a source voltage (VS) is 0V and a drain voltage (VD) is 1V or 14V. Inthis connection, the n-channel TFT has a channel length (L) of 8.1 μm, achannel width (W) of 7.6 μm and a thickness of a gate insulation film(Tox) of 120 nm.

The bold lines represent the first characteristic prior to a stresstest, and the dotted lines represent the second characteristicsubsequent to the stress test in FIG. 36. FIG. 36 shows that thedegradation owing to hot carriers is observed very little. The stresstest is performed under a condition almost the same as the conditionexplained in Example 23 although a gate voltage is set at 4V.

FIG. 37 shows the change of degradation rate of the field effectmobility (μ_(FE)) dependent on the length of the Lov region. Thedegradation rate of the μ_(FE) is defined in Example 23. FIG. 37 clearlyshows that the degradation of the μ_(FE) due to hot carriers isrestricted when the length of the Lov region is 1 μm or more.

FIGS. 38A and 38B show the result of along time reliability test withrespect to the liquid crystal display device fabricated by the processsteps in accordance with the Examples 4, 5 and 11. The reliability testis performed in an atmosphere of 80° C. The power source of a firstshift register constituting a source side driving circuit and a secondshift register constituting a gate side driving circuit are kept at afirst positive power source 8.5V, a second positive power source 4.2Vand a negative power source −8.0V during the reliability test.

FIG. 38A shows the time dependent change of current consumption (S_IDD)in the case of the first shift register constituting the source sidedriving circuit, and little change is observed until 2000 hours. FIG.38B shows the time dependent change of the lowest operation voltage(S_VDD) in the case of the first shift register constituting the sourceside driving circuit, and little change is also observed until 2000hours. In the second shift register constituting the gate side drivingcircuit, almost the same results as the FIGS. 38A and 38B are obtainedalthough not shown here.

Example 25

The present invention can be employed also for the case where aninter-layer insulation film is formed on a conventional MOSFET and thena TFT is formed on this film. In other words, a semiconductor devicehaving a three-dimensional structure can be accomplished, too. SOIsubstrates such as a SIMOX, Smart-Cut (trade name of SOITEC Co.), ELTRAN(trade name of Canon Co.), and so forth, can be used for the substrate.

Incidentally, the construction of this example can be freely combinedwith the construction of any of Examples 1 to 7, 13 to 19, 21 and 22.

Example 26

The liquid crystal display device fabricated by the present inventioncan use various liquid crystal materials. Examples of such materialsinclude a TN liquid crystal, a PDLC (Polymer Dispersion type LiquidCrystal), an FLC (a Ferroelectric Liquid Crystal), an AFLC(Anti-Ferroelectric Liquid Crystal) and a mixture of the FLC and theAFLC.

For example, it is possible to use those liquid crystal materials whichare described in H. Furue et al.; “Characteristics and Driving Scheme ofPolymer-Stabilized Mono-stable FLCD Exhibiting Fast Response Time andHigh Contrast Ratio with Gray-Scale Capability, SID, 1998”, T. Yoshidaet al.; “A Full-Color Thresholdless Antiferroelectric LCD ExhibitingWide Viewing Angle with Fast Response Time, 841, SID97 DIGEST, 1997”,and U.S. Pat. No. 5,594,569.

Particularly when the thresholdless antiferroelectric LCD (hereinafterabbreviated as “TL-AFLC”) is used, the operating voltage of the liquidcrystal can be lowered to about ±2.5 V, and the power source voltage maybe from about 5 to 8 V in some cases. In other words, the drivingcircuit and the pixel unit can be operated at the same power sourcevoltage, and power consumption of the liquid crystal device can bereduced as a whole.

The ferroelectric liquid crystal and the antiferroelectric liquidcrystal have the advantage that their response time is higher than thatof the TN liquid crystal. Because the crystalline silicon TFT used inthe present invention can achieve the TFT having an extremely highoperation speed, the present invention can accomplish a liquid crystaldisplay device having a high image response speed by making the most ofthe high response speed of the ferroelectric liquid crystal and theantiferroelectric liquid crystal.

Needless to say, the liquid crystal display device of this example canbe used effectively as a display unit of electric/electronic appliancessuch as a personal computer.

The construction of this example can be combined freely with theconstruction of any of Examples 1 to 22 and 25.

Example 27

The present invention can be applied to an active matrix type EL(electroluminescence) display (called also the “EL display device”).FIG. 24 shows its example.

FIG. 24 is a circuit diagram of the active matrix type EL display ofthis example. Reference numeral 81 denotes a display region. An Xdirection (source side) driving circuit 82 and a Y direction (gate side)driving circuit 83 are disposed round the display region 81. Each pixelof the display region 81 includes a switching TFT 84, a capacitor 85, acurrent controlling TFT 86 and an EL cell 87. An X direction signal line(source signal line) 88 a (or 88 b) and a Y direction signal line (gatesignal line) 89 a (or 89 b, 89 c) are connected to the switching TFT 84.Power source lines 90 a and 90 b are connected to the currentcontrolling TFT 86.

The active matrix type EL display of this example can be combined withthe construction of any of Examples 1 to 4, 6 and 8 to 22 and 25.

Example 28

In this example, explanation will be given on the case where the presentinvention is applied to the fabrication of an EL (electroluminescence)display device. FIG. 25A is a top view of the EL display device of thisexample and FIG. 25B is its sectional view.

Referring to FIG. 25A, reference numeral 4002 denotes a pixel unit,reference numeral 4003 denotes a source side driving circuit andreference numeral 4004 does a gate side driving circuit. Each drivingcircuit is extended via a wiring 4005 to an FPC (flexible printedcircuit) 4006 and is then connected to an external appliance.

In this instance, a first seal member 4101, a cover member 4102, afiller 4103 and a second seal member 4104 are disposed in such a fashionas to encompass the pixel unit 4002, the source side driving circuit4003 and the gate side driving circuit 4004.

FIG. 25B is a sectional view taken along a line A-A′ of FIG. 25A.Driving TFTs 4201 (an n-channel TFT and a p-channel TFT being shownhereby) contained in the source side driving circuit 4003 and a currentcontrolling TFT 4202 (TFT for controlling the current to the EL cell)contained in the pixel unit 4002 are fabricated over the substrate 4001.

This example uses a TFT having the same structure as that of thep-channel TFT 181 and the n-channel TFT 182 shown in FIGS. 3A to 3C forthe driving TFT 4201, and a TFT having the same structure as that of thep-channel TFT 181 shown in FIGS. 3A to 3C for the current controllingTFT 4202. A holding capacitance (not shown) connected to the gate of thecurrent controlling TFT 4202 is disposed in the pixel unit 4002.

An inter-layer insulation film (planarization film) 4301 made of a resinmaterial is formed over the driving TFT 4201 and the pixel TFT 4202, anda pixel electrode (anode) 4302 electrically connected to the drain ofthe pixel TFT 4202 is formed on the inter-layer insulation film 4301. Atransparent conductive film having a high work function is used for thepixel electrode 4302. A compound between indium oxide and tin oxide or acompound between indium oxide and zinc oxide can be used for thetransparent conductive film.

An insulation film 4303 is formed on the pixel electrode 4302, and anopening is bored in the insulation film 4303 on the pixel electrode4302. An EL (electroluminescence) layer 4304 is formed at this openingon the pixel electrode 4302. A known organic or inorganic EL materialcan be used for the EL layer 4304. Low molecular weight type (monomertype) materials and polymer type materials can be used for the organicEL materials.

The EL layer 4304 can be formed by a known vapor deposition technologyor application technology. The structure of the EL layer may be either alaminate structure or a single layer structure of a positive holeinjection layer, a positive hole transportation layer, a light emittinglayer, an electron transportation layer or an electron injection layerby combining them freely.

A cathode 4305 comprising a conductive film having a shading property(typically, a conductive film made of aluminum, copper or silver as theprincipal component or its laminate film with other conductive film) isformed on the EL layer 4304. The moisture and oxygen that may exist inthe interface between the cathode 4305 and the EL layer 4304 arepreferably removed as much as possible. Therefore, these films arecontinuously formed in vacuum, or the EL layer 4304 is first formed in anitrogen or inert gas atmosphere midis shaped into the cathode 4305without being brought into contact with oxygen and moisture. To achievesuch film formation, this example uses a multi-chamber system (clustertool system) film formation apparatus.

The cathode 4305 is electrically connected to the wiring 4005 in theregion represented by reference numeral 4306. The wiring 4005 applies apredetermined voltage to the cathode 4305 and is electrically connectedto the FPC 4006 through an anisotropic conductive film 4307.

The EL cell comprising the pixel electrode (anode) 4302, the EL layer4304 and the cathode 4305 are formed in the manner described above. ThisEL cell is encompassed by the first seal member and the cover material4102 bonded to the substrate 4001 by the first seal member 4101. The ELcell is further sealed by the filler 4103.

Examples of the cover material 4102 include a glass sheet, a metal sheet(typically, a stainless steel sheet), a ceramic sheet, an FRP(fiberglass-reinforced plastic) sheet, a PVF (polyvinyl fluoride) film,a Mylar film, a polyester film and an acrylic resin film. A laminatesheet sandwiching an aluminum foil by the PVF films or the Mylar filmscan also be used.

When the radiation direction of light from the EL cell travels towardsthe cover material side, however, the cover material must betransparent. In this case, a transparent material such as a glass sheet,a plastic sheet, a polyester film or an acrylic resin film is used.

A UV-curing resin or a thermosetting resin can be used for the filler4103. Examples include PVC (polyvinyl chloride), an acrylic resin, apolyimide resin, an epoxy resin, a silicone resin, PVB (polyvinylbutyral) and EVA (ethylene-vinyl acetate). Degradation of the EL cellcan be restrained if a hygroscopic material (preferably, barium oxide)is disposed inside this filler 4103.

The filler 4103 may further contain a spacer. If the spacer is made ofbarium oxide, the spacer itself becomes hygroscopic. When the spacer isdisposed, it is also effective to dispose a resin film on the cathode4305 as a buffer layer for buffering the pressure from the spacer.

The wiring 4005 is electrically connected to the FPC 4006 through theanisotropic conductive film 4307. The wiring 4005 transmits the signalstransferred to the pixel unit 4002, the source side driving circuit 4003and the gate side driving circuit 4004, to the FPC 4006. The wiring 4005is electrically connected to the external appliance by the FPC 4006.

In this example, the second seal member 4104 is disposed in such afashion as to cover the exposed portion of the first seal member 4101and a part of the FPC 4006 and to completely cut off the EL cell fromthe external atmosphere. In this way, the EL display device having thesectional structure shown in FIG. 25B can be obtained. Incidentally, theEL display device of this example may be fabricated in combination withthe construction of any of Examples 1 to 4, 6 to 20 and 22.

FIG. 26 shows a further detailed sectional structure of the pixel unit,FIG. 27A shows its top structure and FIG. 27B shows its circuit diagram.Since common reference numerals are used in these drawings,cross-reference should be made with one another.

In FIG. 26, the switching TFT 4402 disposed on the substrate 4401 isformed of the n-channel TFT 183 shown in FIG. 3C. Therefore, referenceshould be made to the explanation of the structure of the n-channel TFT183 for the detail of the structure. The wiring represented by referencenumeral 4403 is the one that electrically connects the gate wirings 4404a and 4404 b of the switching TFT 4402.

Incidentally, this example has the double-gate structure in which twochannel formation regions are formed, but it may have a single gatestructure in which only one channel formation region is formed, or atriple-gate structure in which three channel formation regions areformed.

The drain wiring 4405 of the switching TFT 4402 is electricallyconnected to the gate electrode 4407 of the current controlling TFT4406. Incidentally, the current controlling TFT 4406 is formed of thep-channel TFT 181 shown in FIG. 3C. Therefore, as to the explanation ofthe structure, reference should be made to the explanation of thep-channel TFT 181. Though this example employs the single gatestructure, it may be a double-gate structure or a triple-gate structure.

A first passivation film 4408 is disposed on the switching TFT 4402 andthe current controlling TFT 4406, and a planarization film 4409 made ofa resin is formed on this passivation film 4408. It is of utmostimportance to planarize the steps resulting from the TFTs by using thisplanarization film 4409. Since the EL layer to be formed later isextremely thin, the existence of any step may invite a luminescencedefect. Therefore, planarization is preferably effected before theformation of the pixel electrodes so that the EL layer can be shapedinto a plane as planar as possible.

Reference numeral 4410 denotes a pixel electrode (an anode of the ELcell) comprising a transparent conductive film. The pixel electrode 4410is electrically connected to a drain wiring 4411 of the currentcontrolling TFT 4406. A conductive film made of a compound betweenindium oxide and tin oxide or a compound between indium oxide and zincoxide can be used for the pixel electrode 4410.

An EL layer 4412 is formed on the pixel electrode 4410. Though FIG. 26shows only one pixel, the EL layers are formed properly so as tocorrespond to R (red), G (green) and B (blue) colors, respectively, inthis example. In this example, a low molecular weight organic ELmaterial is formed by vapor deposition. More concretely, the EL layerhas a laminate structure in which a 20 nm-thick copper phthalocyanine(CuPc) film is disposed as a positive hole injection layer, and a 70nm-thick tris-8-quinolinolatoaluminum complex (Alq₃) film as alight-emitting layer is disposed on the CuPc film. The luminescencecolor can be controlled when a fluorescent pigment is added to Alq₃.

However, the example given above represents merely one example of theorganic EL materials that can be used for the EL layer, and does notrestrict the invention. The EL layer (the layer for luminescence and formoving the carrier for luminescence) may be formed by freely combiningthe luminescence layer, the charge transportation layer and the chargeinjection layer. Though this example uses the low molecular weightorganic EL material for the EL layer, it can use a polymeric organic ELmaterial, too. Inorganic materials such as silicon carbide can also beused for the charge transportation layer and the charge injection layer.Known materials can be used for these organic EL materials and theinorganic materials.

Next, a cathode 4413 comprising a shading conductive film is disposed onthe EL layer 4412. In this example, an alloy film of aluminum andlithium is used for the shading conductive film. Needless to say, aknown MgAg film (an alloy film of magnesium and silver) may be used,too. A conductive film made of the elements belonging to the Group 1 or2 of the Periodic Table, or a conductive film containing any of theseelements may be used for the cathode materials.

The EL cell 4414 is completed at the point of time when this cathode4413 is completed. Incidentally, the term “EL cell 4414” hereby usedmeans a capacitor comprising the pixel electrode (anode) 4410, the ELlayer 4412 and the cathode 4413.

Next, the top structure of the pixel in this example will be explainedwith reference to FIG. 27A. The source of the switching TFT 4402 isconnected to the source wiring 4415 and the drain is connected to thedrain wiring 4405. The drain wiring 4405 is electrically connected tothe gate electrode 4407 of the current controlling TFT 4406. The sourceof the current controlling TFT 4406 is electrically connected to acurrent supply line 4416 and the drain is electrically connected to thedrain wiring 4417. The drain wiring 4417 is electrically connected tothe pixel electrode (anode) 4418 represented by dotted line.

At this time, a holding capacitance is formed in a region represented byreference numeral 4419. The holding capacitance 4419 is defined by asemiconductor film 4420 electrically connected to the current supplyline 4416, an insulation film (not shown) that is the same layer as thegate insulation film and the gate electrode 4407. A capacitance definedby the gate electrode 4407, the same layer (not shown) as the firstinter-layer insulation film and the current supply line 4416 can also beused as the holding capacitance.

Incidentally, the construction of this example can be freely combinedwith the construction of any of Examples 1 to 4, 6 and 8 to 22 and 25.

Example 29

In this example, explanation will be given with reference to FIG. 28 onthe EL display device that has a different pixel structure from that ofExample 28. For the explanation of the portions indicated by the samereference numerals as those in FIG. 26, reference should be made to theexplanation of Example 26.

Referring to FIG. 28, a TFT having the same structure as that of then-channel TFT 182 shown in FIG. 3C is used for the current controllingTFT 4501. Needless to say, the gate electrode 4502 of the currentcontrolling TFT 4501 is connected to the drain wiring 4405 of theswitching TFT 4402. The drain wiring 4503 of the current controlling TFT4501 is electrically connected to the pixel electrode 4504.

In this example, the pixel electrode 4504 functions as the cathode ofthe EL cell, and is formed of a shading conductive film. Moreconcretely, an alloy film of aluminum and lithium is used, but aconductive film made of any of the elements belonging to the Group 1 or2 of the Periodic Table or a conductive film added with these elementsmay be used.

The EL layer 4505 is formed on the pixel electrode 4504. Though FIG. 28shows only one pixel, the EL layer corresponding to G (green) is formedin practice by vapor deposition and coating (preferably, spin coating)in this example. More concretely, the EL layer has a laminate structurein which a 20 nm-thick lithium fluoride (LiF) film is disposed as theelectron injection layer and a 70 nm-thick PPV (poly-paraphenylenevinylene) film is disposed as the luminescence layer on the LiF film.

Next, the anode 4506 comprising a transparent conductive film isdisposed on the EL layer 4505. In this example, a conductive film madeof a compound between indium oxide and tin oxide or a compound betweenindium oxide and zinc oxide is used as the transparent conductive film.

The EL cell 4507 is completed at the point when this anode 4506 isformed. Incidentally, the term “EL cell 4507” used hereby means acapacitor comprising the pixel electrode (cathode) 4504, the EL layer4505 and the anode 4506.

At this time, it is of utmost importance that the current controllingTFT 4501 has the construction of the present invention. The currentcontrolling TFT 4501 is a device for controlling the quantity of thecurrent flowing through the EL cell 4507. Therefore, a large quantity ofthe current flows through this TFT and the TFT has a high possibility ofdegradation by heat and degradation by hot carriers. Therefore, theconstruction of the present invention, wherein the LDD region 4509 is sodisposed as to overlap with the gate electrode 4502 through the gateinsulation film 4508 on the drain side of the current controlling TFT4501, is extremely effective.

The current controlling TFT 4501 in this example forms also a parasiticcapacitance called a “gate capacitance” between the gate electrode 4502and the LDD region 4509. The function equivalent to the holdingcapacitance 4419 shown in FIGS. 27A and 27B can be achieved by adjustingthis gate capacitance. Particularly when the EL display device isoperated in a digital driving system, the capacitance of the holdingcapacitance may be smaller than when the EL display device is driven byan analog driving system. Therefore, the gate capacitance can substitutethe holding capacitance.

Incidentally, the construction of this example can be freely combinedwith the construction of Examples 1 to 4, 6 and 8 to 22 and 25.

Example 30

This example represents an example of a pixel structure that can be usedfor the pixel unit of the EL display device shown in Example 28 or 29,with reference to FIGS. 29A, 29B and 29C. In this example, referencenumeral 4601 denotes a source wiring of a switching TFT 4602 andreference numeral 4603 denotes a gate wiring of the switching TFT 4602.Reference numeral 4604 denotes a current controlling TFT and referencenumeral 4605 denotes a capacitor. Reference numerals 4606 and 4608denote current supply lines and reference numeral 4607 denotes an ELcell.

FIG. 29A shows an example where the current supply line 4606 is sharedin common between two pixels. In other words, this example has thefeature in that two pixels are formed in symmetry of line with thecurrent supply line 4606 as the center. In this case, since the numberof current supply lines can be reduced, the pixel unit can be furtherminiaturized.

FIG. 29B shows an example where the current supply line 4608 is disposedin parallel with the gate wiring 4603. Incidentally, FIG. 29B shows astructure in which the current supply line 4608 and the gate wiring 4603do not overlap with each other, but they may overlap with each otherthrough an insulation film so long as they are formed in differentlayers. In this case, since the occupying area can be shared between thepower supply line 4608 and the gate wiring 4603, the pixel unit can befurther miniaturized.

The feature of the construction shown in FIG. 29C lies in that thecurrent supply line 4608 is disposed in parallel with the gate wiring4603 in the same way as in FIG. 29B, and that the two pixels arearranged in symmetry of line with the current supply line 4608 as thecenter. It is also effective to dispose the current supply line 4608 insuch a fashion as to overlap with either one of the gate wirings 4603.In this case, since the number of current supply lines can be decreased,the pixel unit can be further miniaturized.

Example 31

The electro-optical device and the semiconductor circuit according tothe present invention can be used for the display portion of electricalappliances and signal processing circuits. Such electric appliancesinclude video cameras, digital cameras, projectors, projection TVs,goggle type displays, head-mount displays, navigation systems, audioreproduction apparatuses, notebook type personal computers, gamemachines, portable information terminals (mobile computers, cellulartelephones, portable game machines, electronic books, etc.), imagereproduction apparatuses equipped with a recording medium, and so forth.FIGS. 30A to 30F, 31A to 31D, 32A and 32B show concrete examples of suchelectric appliances.

FIG. 30A shows the cellular telephone, which comprises a main body 2001,a sound output unit 2002, a sound input unit 2003, a display unit 2004,an operation switch 2005 and an antenna 2006. The electro-optical deviceof the present invention can be used for this display unit 2004, and thesemiconductor circuit of the present invention can be used for the soundoutput unit 2002, the sound input unit 2003 or the CPU and the memory.

FIG. 30B shows the video camera, which comprises a main body 2101, adisplay unit 2102, a sound input unit 2103, an operation switch 2104, abattery 2105 and an image reception unit 2106. The electro-opticaldevice of the present invention can be used for the display unit 2102,and the semiconductor circuit of the present invention can be used forthe sound input unit 2103 or the CPU and the memory.

FIG. 30C shows the mobile computer, which comprises a main body 2201, acamera unit 2202, an image reception unit 2203, an operation switch 2204and a display unit 2205. The electro-optical device of the presentinvention can be used for the display unit 2205, and the semiconductorcircuit of the present invention can be used for the CPU and the memory.

FIG. 30D shows the goggle type display, which comprises a main body2301, a display unit 2302 and an arm unit 2303. The electro-opticaldevice of the present invention can be used for the display unit 2302,and the semiconductor circuit of the present invention can be used forthe CPU and the memory.

FIG. 30E shows the rear projector or the projection TV, which comprisesa main body 2401, a light source 2402, a liquid crystal display device2403, a polarization beam splitter 2404, reflectors 2405 and 2406 and ascreen 2407. The present invention can be applied to the liquid crystaldisplay device 2403, and the semiconductor circuit of the presentinvention can be used for the CPU and the memory.

FIG. 30F shows the front projector, which comprises a main body 2501, alight source 2502, a liquid crystal display device 2503, an opticalsystem 2504 and a screen 2505. The present invention can be applied tothe liquid crystal display device 2503, and the semiconductor circuit ofthe present invention can be used for the CPU and the memory.

FIG. 31A shows the personal computer, which comprises a main body 2601,an image input unit 2602, a display unit 2603, a keyboard 2604 and soforth. The electro-optical device of the present invention can be usedfor the display unit 2603, and the semiconductor circuit of the presentinvention can be used for the CPU and the memory.

FIG. 31B shows the electronic game machine, which comprises a main body2701, a memory medium 2702, a display unit 2703 and a controller 2704.The sound and the image outputted from this electronic game machine arereproduced by a display including a casing 2705 and a display unit 2706.Wired communication, wireless communication or optical communication canbe used as communication means between the controller 2704 and the mainbody 2701 or between the electronic game machine and the display. Inthis example, sensor units 2707 and 2708 detect infrared rays. Theelectro-optical device of the present invention can be used for thedisplay unit s 2703 and 2706, and the semiconductor circuit of thepresent invention can be used for the CPU and the memory.

FIG. 31C shows a player (image reproduction apparatus) using a recordingmedium having a program recorded thereon (hereinafter called the“recording medium”). The player comprises a main body 2801, a displayunit 2802, a speaker unit 2803, a recording medium 2804 and an operationswitch 2805. Incidentally, this image reproduction apparatus uses a DVD(Digital Versatile Disc), a CD and so forth as the recording medium, andcan enjoy listening to music, movies, games and Internet communication.The electro-optical device of the present invention can be used for thedisplay unit 2802, the CPU and the memory.

FIG. 31D shows the digital camera, which comprises a main body 2901, adisplay unit 2902, an eyepiece unit 2903, an operation switch 2904 andan image reception unit (not shown). The electro-optical device of thepresent invention can be used for the display unit 2902, the CPU and thememory.

FIGS. 32A and 32B show detailed explanation of the optical engine thatcan be used for the rear projector shown in FIG. 30E and the frontprojector shown in FIG. 30F. Incidentally, FIG. 32A shows the opticalengine and FIG. 32B shows the light source optical system that isassembled in the optical engine.

The optical engine shown in FIG. 32A includes alight source opticalsystem 3001, mirrors 3002, 3005, 3006 and 3007, dichroic mirrors 3003and 3004, optical lenses 3008 a, 3008 b and 3008 c, a prism 3011, liquidcrystal display devices 3010 and a projection optical system 3012. Theprojection optical system 3012 is the optical system that is equippedwith a projection lens. Though this example illustrates a three-platesystem using three liquid crystal display devices 3010, a single platesystem may also be used. Optical lenses, a film having a polarizationfunction, a film for adjusting a phase difference, an IR film and soforth, may be disposed in the optical paths represented by arrows drawnin FIG. 32A.

As shown in FIG. 32B, the light source optical system 3001 includeslight sources 3013 and 3014, a synthetic prism 3015, collimator lenses3016 and 3020, lens arrays 3017 and 3018, and a polarization-conversionelement 3019. Though the light source optical system shown in FIG. 32Buses two light sources, the light source may be one, or three or more.Optical lenses, a film having a polarization function, a film foradjusting a phase difference, an IR film and so forth, may be insertedinto any positions of the light source optical system.

As described above, the range of the application of the presentinvention is extremely broad, and the present invention can be appliedto electric/electronic appliances of all fields. The electric/electronicappliances of this example can be accomplished by any combination ofExamples 1 to 30.

The present invention makes it possible to arrange those circuits thathave appropriate performance in accordance with the requiredspecifications, and to drastically improve the operation performance andthe reliability of a semiconductor device (more concretely, theelectro-optical device).

The present invention can form the holding capacitance having a largecapacity with a small area in the pixel unit of the electro-opticaldevice typified by the AM-LCD. Therefore, the present invention cansecure a sufficient holding capacity even in the AM-LCD having aninterior opposing angle of not greater than 1 inch without lowering theaperture ratio.

Moreover, the present invention can improve the operation performanceand the reliability of a semiconductor device (more concretely, theelectrical appliance) including the electro-optical device used as adisplay medium.

1. (canceled)
 2. An active matrix display device comprising: atransistor comprising a semiconductor layer which comprises a channelformation region; a first conductive layer electrically connected to oneof a source and a drain of the transistor; a power source line; apassivation film over the power source line, the first conductive layerand the transistor, the passivation film comprising silicon andnitrogen; a first insulating film over the passivation film, the firstinsulating film comprising an organic resin; a second conductive layerover the first insulating film, wherein the second conductive layer isconnected to the power source line through a contact hole of the firstinsulating film and the passivation film and is configured to besupplied with a common potential through the power source line; a secondinsulating film over the second conductive layer; and a pixel electrodeelectrically connected to the first conductive layer, wherein the pixelelectrode and the second conductive layer are overlapped with each otherwith the second insulating film interposed therebetween to form aholding capacitance, wherein the pixel electrode is in direct contactwith the first conductive layer.
 3. The active matrix display deviceaccording to claim 2, further comprising a liquid crystal materialadjacent to the pixel electrode, wherein the active matrix displaydevice is a liquid crystal device.
 4. The active matrix display deviceaccording to claim 2, further comprising a light emitting layer adjacentto the pixel electrode, wherein the active matrix display device is anelectroluminescence display device.
 5. The active matrix display deviceaccording to claim 2, wherein the second conductive layer is a shadingfilm.
 6. The active matrix display device according to claim 2, whereinthe passivation film comprises silicon nitride.
 7. The active matrixdisplay device according to claim 2, wherein the semiconductor layercomprises polycrystalline silicon.
 8. An active matrix display devicecomprising: a transistor comprising a semiconductor layer whichcomprises a channel formation region; a first conductive layerelectrically connected to one of a source and a drain of the transistor;a power source line; a passivation film over the first conductive layer,the power source line and the transistor, the passivation filmcomprising silicon and nitrogen; a first insulating film over thepassivation film, the first insulating film comprising an organic resin;a second conductive layer over the first insulating film, wherein thesecond conductive layer is connected to the power source line through acontact hole of the first insulating film and the passivation film; asecond insulating film over the second conductive layer; and a pixelelectrode electrically connected to the first conductive layer, whereinthe pixel electrode and the second conductive layer are overlapped witheach other with the second insulating film interposed therebetween toform a holding capacitance.
 9. The active matrix display deviceaccording to claim 8, wherein the semiconductor layer comprisespolycrystalline silicon.
 10. The active matrix display device accordingto claim 8, further comprising a liquid crystal material adjacent to thepixel electrode, wherein the active matrix display device is a liquidcrystal device.
 11. The active matrix display device according to claim8, further comprising a light emitting layer adjacent to the pixelelectrode, wherein the active matrix display device is anelectroluminescence display device.
 12. The active matrix display deviceaccording to claim 8, wherein the second conductive layer is a shadingfilm.
 13. The active matrix display device according to claim 8, whereinthe passivation film comprises silicon nitride.